Skip to main content Accessibility help
×
Home

Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

  • X. W. Zhang (a1), S. P. Wong (a1), W. Y. Cheung (a1) and F. Zhang (a1)

Abstract

Nickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.

Copyright

References

Hide All
1. Tan, Z., Namavar, F., Budnick, J. I., Sanchez, F. H., Fasihuddin, A., Heald, S. M., Bouldin, C. E. and Woicik, J. C., Phys. Rev., B46, 4077 (1992).
2. Yew, J. Y., Chen, L. J. and Nakamura, K., Appl. Phys. Lett., 69, 999 (1996).
3. Xu, D. X., Das, S. R., Peters, C. J. and Erickson, L. E., Thin Solid Films, 326, 143 (1998).
4. Gao, K. Y., Liu, B. X., Appl. Phys., A68, 333 (1999).
5. Brown, I.G., Gavin, J. E. and MacGill, R. A., Appl. Phys. Lett., 47, 358 (1985).
6. Peng, Q., Wong, S.P., Wilson, I.H., Wang, N., Fung, K.K., Thin Solid Films 270, 573 (1995).
7. Peng, Q. and Wong, S.P., Mat. Res. Soc. Symp. Proc. 402, 487 (1996).
8. Doolittle, L.R., Nucl. Instrum. Meth. B5, 344 (1985).
9. Hensel, J. C., Tung, R. T. Poate, J. M. and Unterwald, F. C., Appl. Phys. Lett., 44, 913 (1984).
10. Murarka, S. P., Intermetallics, 3, 173 (1995).
11. Nava, F., Tu, K. N., Thomas, O., Senateur, J. P., Madar, R., Borghesi, A., G., . uizzetti, G., Gottlieb, U., Laborde, O. and Bisi, O., Mater. Sci. Rept., 9, 141 (1993).

Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

  • X. W. Zhang (a1), S. P. Wong (a1), W. Y. Cheung (a1) and F. Zhang (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed