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Formation and Electric Properties of Disordered Yb Layers on Si(111)7×7 Surface

Published online by Cambridge University Press:  10 February 2011

Nickolay G. Galkin ,
Dmitrii L. Goroshko ,
Alexander S. Gouralnik ,
Sergei A. Dotsenko  and
Andrei N. Boulatov
Nickolay G. Galkin
Affiliation:
Institute of Automation and Control Processes, Russian Academy of Science, 690041, Radio str. 5, Vladivostok, Russia. Far Eastern State University, Vladivostok, 690000, Sukhanova str. 8, Vladivostok, Russia.
Dmitrii L. Goroshko
Affiliation:
Institute of Automation and Control Processes, Russian Academy of Science, 690041, Radio str. 5, Vladivostok, Russia. Vladivostok State University of Economic and Service, 690600, Gogolya str. 41, Vladivostok, Russia
Alexander S. Gouralnik
Affiliation:
Institute of Automation and Control Processes, Russian Academy of Science, 690041, Radio str. 5, Vladivostok, Russia.
Sergei A. Dotsenko
Affiliation:
Institute of Automation and Control Processes, Russian Academy of Science, 690041, Radio str. 5, Vladivostok, Russia.
Andrei N. Boulatov
Affiliation:
Institute of Automation and Control Processes, Russian Academy of Science, 690041, Radio str. 5, Vladivostok, Russia. Far Eastern State University, Vladivostok, 690000, Sukhanova str. 8, Vladivostok, Russia.
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Abstract

Interface formation in Yb/Si(111) system has been investigated by AES and EELS spectroscopy and in situ Hall measurements at room temperature. It was found that interface formation process may be divided into five stages: 1) two-dimensional growth of Yb, 2) intermixing and formation of two-dimensional Yb silicide, 3) formation of 3D silicide islands, 4) growth of Yb on 3D silicide islands, 5) coalescence of 3D Yb – Yb silicide islands and formation of continuos Yb film. We attribute the observed character of conductivity in Yb/Si(111) system to the evolution of morphological and electrical properties of the growing Yb layer (2D Yb, silicide, metal) rather than to the changes within the space charge layer under the surface. Some amplitude oscillations have been observed in sheet conductivity, hole mobility and surface hole concentration within the coverage range below 6 ML where formation of a continuos Yb silicide film completes. Conductivity oscillations are explained by transition from semiconductor-type conductivity at the first growth stages (two-dimensional Yb growth) to metal-like conductivity of 2D and 3D Yb silicide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I3.7
Copyright
Copyright © Materials Research Society 2003

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