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Formation and Effects of Secondary Defects in Ion implanted Silicon

  • Jack Washburn (a1)


The clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.



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1. Seshan, K. and Washburn, J., Phys. Stat. Sol. (a) 26, 345 (1974).
2. Madden, P. K. and Davidson, S. M., Rad. Effects 14, 271 (1972).
3. Mayer, J. et al. , Can. Journ. of Phys. 46, 663 (1968).
4. Sadana, D., unpublished data.
5. Muller, H. et al. , App. Phys. Lett. 26, 292 (1975).
6. Csepregi, L. et al. , App. Phys. Lett. 29, 92 (1976).
7. Radiation Effects in Semiconductors, Vook, P., ed., (Plenum Press, 1968).
8. Drosd, R. and Washburn, J., J. Appl. Phys. 51, 4106 (1980).
9. Seshan, K. and Washburn, J., Rad. Eff. 26, 31 (1975).
10. Wu, Wei-Kuo and Washburn, J., J. Appl. Phys. 48, 3742 (1977).
11. Sadana, D. et al. , Appl. Phys. Lett. 37, 615 (1980).
12. Csepregi, L. et al. , J. Appl. Phys. 48, 4234 (1977).


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