Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-24T14:37:42.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and Characterization of Ohmic Contacts on Diamond

Published online by Cambridge University Press:  25 February 2011

V. Venkatesan ,
D.M. Malta  and
K. Das
V. Venkatesan
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, P. 0. Box 13608, Research Triangle Park, N. C. 27709
D.M. Malta
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, P. 0. Box 13608, Research Triangle Park, N. C. 27709
K. Das
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, P. 0. Box 13608, Research Triangle Park, N. C. 27709
Get access

Abstract

Low resistance ohmic contacts have been fabricated on a naturally occurring lib diamond crystal and on polycrystalline diamond films by B ion-implantation and subsequent Ti/Au bilayer metallization. A high B concentration was obtained at the surface by ion implantation, a postimplant anneal and a subsequent chemical removal of the graphite layer. A bilayer metallization of Ti followed by Au, annealed at 850°C, yielded specific contact resistance values (as measured using a standard transmission line model (TLM) pattern) of the order of 10-5 Ω cm2 for chemical vapor deposition (CVD) grown polycrystalline films and the natural lib crystal. Specific contact resistance values have also been determined from circular TLM measurements on CVD films and the values compared to those from standard TLM measurements. These contacts were stable to a measurement temperature of ∼400°C and no degradation due to temperature cycling was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 425
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Collins, A. T., Semicond. Sci. Technol., 4, 605 (1989).Google Scholar
[2] Shenai, K., Scott, R. and Baliga, B. J., IEEE Trans. E. D. 36, 1811 (1989).Google Scholar
[3] Trew, R. J., Yan, J-B. and Mock, P. M., ibid., 792, 598 (1991).Google Scholar
[4] Davis, R. F., in Tech. Papers 4th Int. High Frequency Power Conversion (Intertec Communications Inc., Ventura, CA) pp. 81, May 1989.Google Scholar
[5] Moazed, K. L., Zeidler, J. R. and Taylor, M. J., J. Appl. Phys., 68, 2246, (1990).Google Scholar
[6] Hewett, C. A., Zeidler, J. R., Taylor, M. J., Zeisse, C. R. and Moazed, K. L., in New Diamond Science and Tech, edited by Messier, R., Glass, J.T., Butler, J.E. and Roy, R., (Mater. Res. Soc., Pittsburgh, PA 1991), p.1107.Google Scholar
[7] Braunstein, G. and Kalish, R., J. Appl. Phys., 54, 2106 (1983).Google Scholar
[8] Prins, J. F., J. Phys. D: Appl. Phys., 22, 1562 (1989).Google Scholar
[9] Venkatesan, V. and Das, K., IEEE Electron Dev. Lett., EDL–13, 126 (1992).Google Scholar
[10] Kobashi, K., Nishimura, K., Kawate, Y. and Horiuchi, T., Phys. Rev. B, 38 4067 (1988).Google Scholar
[11] Reeves, G. K., Solid State Electronics, 23, 487 (1980).Google Scholar
[12] Geis, M., Proc. IEEE, 79, 669 (1991).Google Scholar
[13] Windheim, J. A. von, Malta, D.M., Venkatesan, V. and Das, K., to be presented at the Electronic Materials Conference, TMS, Boston, MA, June 24-26, 1992.Google Scholar
[14] Reeves, G. K. and Harrison, H. B., IEEE Electron Dev. Lett., EDL–3, 111 (1982).Google Scholar
[15] Zhu, D. G. and Wu, D. F., Acta Physica Sinica, 36, 752 (1987).Google Scholar
[16] Zhu, D. G., Solid State Electronics, 34, 1165 (1991).Google Scholar