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The Formation and Annealing of Amorphous Layers of Al2O3

  • G. C. Farlow (a1), P. S. Sklad (a2) (a3), C. W. White (a2) (a4), C. J. McHargue (a2) (a3) and B. R. Appleton (a2) (a4)...

Abstract

The critical dose for formation of an amorphous layer of Al2O3 by ion irradiation at 77 K has been determined. It is found to lie between 2 and 3 × 1015/cm2 if the sample is irradiated near the <0001> axis of the substrate and is found to lie in the neighborhood of 2 × 1016/cm2 if the irradiation is near the <1210> axis. The amorphous layers are found to recrystallize epitaxially if annealed at 1190 degrees C and to form a metastable microstructure upon annealing at 800 degrees C.

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The Formation and Annealing of Amorphous Layers of Al2O3

  • G. C. Farlow (a1), P. S. Sklad (a2) (a3), C. W. White (a2) (a4), C. J. McHargue (a2) (a3) and B. R. Appleton (a2) (a4)...

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