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Fluorinated Silicon Nitride Film Deposited at Low Temperatures from SiH4-SiF4-NH3

  • Y.-B. Park (a1) (a2), S. Rhee (a1), J.-H. Choi (a2), C.-W. Kimb (a2) and J.H. Suok (a2)...

Abstract

The effect of SiF4 addition on the deposition characteristics and film property has been studied for the improvement of long term stability of the SiNx:F film in TFT applications. During the deposition with SiF4 addition, atomic hydrogen species in the gas phase significantly decreased. A detailed bonding configuration of fluorine and hydrogen was investigated by XPS and FT-IR. Optical band gap increases with the increment of fluorine concentration in the film. High compressible stress turned to low tensile stress with increasing SiF4 flow rate. The breakdown strength and barrier height for the conduction of trapped electron were improved by SiF4 addition even in Si-rich SiNx:H films due to the stable Si-F bond formation.

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Fluorinated Silicon Nitride Film Deposited at Low Temperatures from SiH4-SiF4-NH3

  • Y.-B. Park (a1) (a2), S. Rhee (a1), J.-H. Choi (a2), C.-W. Kimb (a2) and J.H. Suok (a2)...

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