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Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs

  • Hangfeng Ji (a1), Andrei Sarua (a2), Martin Kuball (a3), Jo Das (a4), Wouter Ruythooren (a5), Marianne Germain (a6) and Gustaaf Borghs (a7)...

Abstract

We report on a temperature study of flip-chip mounted multi-finger AlGaN/GaN heterostructure field effect transistors (HFETs) using micro-Raman spectroscopy and infrared (IR) thermography. Flip-chip mounting can be used to improve thermal device management, in particular, for devices grown on low thermal conductivity substrates such as sapphire. In this study, we compare two flip-chip mounted HFETs of different flip-chip contact bump layout designs and a non flip-chip mounted HFET. Both temperature measurements and 3D temperature simulations are presented. The results show that minimizing the distance between the bumps and the active area of the HFET is essential for obtaining a low device operating temperature.

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1. Xu, J. J., Keller, , Parish, G., Heikman, S., Mishra, U. K., and York, A., “A 3–10-GHz GaN-Based Flip-Chip Integrated Broad-Band Power Amplifier”, IEEE Trans. on Microwave Theory and Tech. 48, 2573 (2000).
2. Eastman, L. F., Tilak, V., Kaper, V., Smart, J., Thompson, R., Green, B., Shealy, J. R. and Prunty, T., “Progress in high-power, high frequency AlGaN/GaN HEMTs”, Phys. Stat. Sol(a). 194, 433 (2002).
3. Wu, Y. F., Kapolnek, D., Ibbetson, J. P., Parikh, P., Keller, B. P., and Mishra, U. K., “Very-high power density AlGaN/GaN HEMTs,” IEEE Trans. Elec. Dev. 48, 586 (2001).
4. Kuball, M., Hayes, J. M., Uren, M. J., Martin, T., Birbeck, J. C. H., Balmer, R. S. and Hughes, B. T., “Measurement of Temperature in Active High-Power AlGaN/GaN HFETs Using Raman Spectroscopy”, IEEE Elec. Dev. Lett. 23, 7 (2002).
5. Derluyn, J., Boeykens, S., Cheng, K., Vandersmissen, R., Das, J., Ruythooren, W., Degroote, S., Leys, M. R., Germain, M., and Borghs, G., “Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer”, J. Appl. Phys. 98, 054501 (2005)
6. McDonald, J., “Microthermal imaging in the infrared”, http://www.Electronics-Cooling.com/Resources/EC_Articles/JAN97/jan97_04.htm
7. Freeman, J. C., “Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs”, http://gltrs.grc.nasa.gov/reports/2004/TM-2004–212900.pdf
8. Kuball, M., Rajasingam, S., Sarua, A., Uren, M. J., Martin, T., Hughes, B. T., Hilton, K. P. and Balmer, R. S., “Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy”, Appl. Phys. Lett. 82, 124 (2003)

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