Skip to main content Accessibility help

Flexible a-Si:H-based Image Sensors Fabricated by Digital Lithography

  • William S. Wong (a1), TseNga Ng (a2), Michael L. Chabinyc (a3), Rene A. Lujan (a4), Raj B. Apte (a5), Sanjiv Sambandan (a6), Scott Limb (a7) and Robert A. Street (a8)...


Amorphous silicon-based x-ray image sensor arrays were fabricated on poly-ethylene naphthalate substrates at process temperatures below 180°C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. The sensor devices were found to be comparable to high-temperature processed devices. The integration of the sensor stack, TFT array and PEN substrate resulted in a flexible x-ray image sensor with 180×180 pixels with 75 dpi resolution.



Hide All
1 Street, R. A., Large Area Image Sensor Arrays, Technology and Applications of Amorphous Silicon, Street, R.A. (Ed.), pp. 147221 (Springer-Verlag, 2000).
2 Suo, Z., Ma, E.Y., Gleskova, H., and Wagner, S., Appl. Phys. Lett. 74, 1177 (1999).
3 Kroon, M. A. and Swaaija, R. A. C. M. M. van, J. Appl Phys. 90, 994 (2001).
4 Wong, W.S., Ready, S., Matusiak, R., White, S.D., Lu, J.-P., Ho, J., Street, R.A., Appl. Phys. Lett. 80, 610–12 (2002).
5 Wong, W.S., Ready, S.E., Lu, J.-P., Street, R.A., IEEE Electron Dev. Lett. 24, 577 (2003).



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed