Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-25T01:43:33.404Z Has data issue: false hasContentIssue false
  • English
  • Français

First-Principles Investigations of Acceptors in ZnSe

Published online by Cambridge University Press:  25 February 2011

Chris G. Van De Walle  and
D. B. Laks
Chris G. Van De Walle
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510 and Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. B. Laks
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Get access

Abstract

We present a theoretical formalism to investigate doping efficiencies of impurities in semiconductors, and show results for various acceptor impurities (Li, Na and N) in ZnSe. These results, obtained from first-principles calculations, yield important insights in the mechanisms that govern impurity formation energies and solubilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 349
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Laks, D. B. and Van de Walle, C. G., these Proceedings.Google Scholar
2 Park, R. M., Troffer, M. B., Rouleau, C. M., DePuydt, J. M., and Haase, M. A., Appl. Phys. Lett. 57, 2127(1990).CrossRefGoogle Scholar
3 Haase, M. A., Cheng, H., DePuydt, J. M., and Potts, J. E., J. Appl. Phys. 67, 448 (1990);CrossRefGoogle Scholar
Haase, M. A., DePuydt, J. M., Cheng, H., and Potts, J. E., Appl. Phys. Lett. 58, 1173 (1991).CrossRefGoogle Scholar
4 Ren, J., Bowers, K. A., Sneed, B., Dreifus, D. L., Cook, J. W. Jr, Schetzina, J. F., and Kolbas, R. M., Appl. Phys. Lett. 57, 1901 (1990).CrossRefGoogle Scholar
5 Marshall, T. and Cammack, D. A., J. Appl. Phys. 69, 4149 (1991).Google Scholar
6 Laks, D. B., Van de Walle, C. G., Neumark, G. F., and Pantelides, S. T., Phys. Rev. Lett. 66, 648 (1991).Google Scholar
7 Qian, G. -X., Martin, R. M., and Chadi, D. J., Phys. Rev. B 38, 7649 (1988);Google Scholar
Chetty, N. and Martin, R. M., to be published.Google Scholar
8 Neumark, G. F., J. Appl. Phys. 51, 3383 (1980).Google Scholar
9 Lange's Handbook of Chemistry, 13th Edition, edited by Dean, J. A., (McGraw-Hill, New York).Google Scholar
10 Haase, M. A., DePuydt, J. M., Cheng, H., and Potts, J. E., Appl. Phys. Lett. 58, 1173 (1991).Google Scholar
11 Marshall, T., Van de Walle, C. G., Gaines, J., and Cammack, D., these Proceedings.Google Scholar
12 Cheng, H., DePuydt, J. M., Potts, J. E., and Haase, M. A., J. Cryst. Growth 95, 512 (1989).Google Scholar