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First Stages of the Platinum Electroless Deposition on Silicon (100) from Hf Solutions.

Published online by Cambridge University Press:  15 February 2011

P. Gorostiza ,
J. Servat ,
J. R. Morante  and
F. Sanz
P. Gorostiza
Affiliation:
Departament de Fisica Aplicada i Electrònica
J. Servat
Affiliation:
Departament de Fisica Aplicada i Electrònica
J. R. Morante
Affiliation:
Departament de Fisica Aplicada i Electrònica
F. Sanz
Affiliation:
Departament de Quícmica Física Universitat de Barcelona. Diagonal 645, Barcelona 08028, Spain.
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Abstract

Electroless metal deposition based upon the addition of fluoride anions to the metal salt aqueous solution have been developed recently on the assumption that the cleanness of the substrate will be guaranteed and the deposit will be of high purity. In this work, platinum is deposited on silicon (100) from fluorinated solution at two different pH's. The influence of pH is analyzed using Tapping Mode Atomic Force Microscopy (TMAFM) to characterize the main morphological properties of the deposit. Combined TMAFM and Transmission Electron Microscopy (TEM) images are presented and X-ray Photoelectron Spectroscopy (XPS) allows us to identify the chemical nature of the silicon surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 611
Copyright
Copyright © Materials Research Society 1996

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References

1.- Pai, P.L. and Ting, C.H., IEEE Electron Device Lett. 10, 423 (1989)Google Scholar
2.- Ting, C.H. and Paunovic, M., J. Electrochem. Soc. 136, 456 (1989)Google Scholar
3.- Calvert, J.M., Dulcey, C.S., Peckerar, M.C., Schnur, J. M., Georger, J.H. Jr, Calabrese, G.S. and Sricharoenchaikit, P., Solid State Tech. 34, 77 (1991)Google Scholar
4.- Calvert, J.M., Chen, M.S., Dulcey, C.S., Georger, J.H., Peckerar, M.C., Schnur, J.M. and Schoen, P.E., J. Electrochem. Soc., 139, 1677 (1992)Google Scholar
5.- Brenner, A. and Riddell, G.E., J. Res. Natl. Bur. Stan. 37, 31(1946)Google Scholar
6.- Pearlstein, F. in “Modern Electroplating”, Lowenheim, F.A. Ed., John Wiley & Sons Inc., New York, p. 170 (1974)Google Scholar
7.- Cho, J.S.H., Kang, H.K., Wong, S.S., Shacham-Diamand, Y., MRS Bulletin XVIII (6), 31 (1993)Google Scholar
8.- Mak, C.Y., MRS Bulletin XIX (8), 55 (1994)Google Scholar
9.- Nagahara, L.A., Ohmori, T., Hashimoto, K. and Fujishima, A., J. Vac. Sci. Technol. A, 11, 763 (1993)Google Scholar
10.- Chyan, O.M.R., Chen, J.J., Chien, H.Y., Hall, L. and Sees, J., 185th. Meeting of The Electrochemical Society, San Francisco (USA), Abstract 894 (1994)Google Scholar
11.- Gorostiza, P., Servat, J., Sanz, F. and Morante, J. R., Thin Solid Films, in press. Google Scholar
12.- Gorostiza, P., Servat, J., Sanz, F. and Morante, J. R., State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII); Ren, F., Pearton, S. J., Chi, G. C., Buckley, D. N., Van Daele, P., Kamijoh, T., Schuermeyer, F., Editors. PV 95–21, The Electrochemical Society Proceedings Series, Pennington NJ, 1995, p.379.Google Scholar