We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO2 films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO2 films with out-of plane particle size ranging from 60–310Å. Each VO2 film was grown on a thin TiO2 buffer layer, which in turn was grown by MOCVD on a polished sapphire (1120) substrate. The transition was found to be first order. As the out-of plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60Å film the transition was observed at ∼61°C with a transition width of ∼10°C, while for the 310Å film the transition temperature was ∼59°C and the transition width ∼2°C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.