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Fine Structure of Visible Light Emitting Porous Silicon

Published online by Cambridge University Press:  28 February 2011

Kiyokazu Nakagawa ,
Akio Nishida  and
Toshikazu Shimada
Kiyokazu Nakagawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185
Akio Nishida
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185
Toshikazu Shimada
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185
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Abstract

Porous Si formed by anodization is studied by means of high-resolution scanning electron microscopy, optical microscopy, micro-photoluminescence spectroscopy, high-resolution transmisson electron microscopy, and micro-Raman spectroscopy. Surface morphologies of porous Si films are varied by changing the anodization conditions. High-resolution scanning electron microscopy measurements show that in all these films, porous Si fine structures of visible photoluminescent regions, which are confirmed with optical microscopy and micro-photoluminescence spectroscopy, are composed of particlelike structure of various sizes from several nm to several tens of nm. Transmission electron microscopy shows that these particles are composed of single-crystal Si spheres covered with an oxide layer. The peak of the Raman spectrum from the particlelike structure is shifted to lower energy and is wider than that for bulk Si, possibly due to lattice expansion around large surface fractions. These results suggest that the effective photoluminescence of porous Si is due to three-dimensional carrier confinement in quantum boxes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 185
Copyright
Copyright © Materials Research Society 1993

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References

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