Fine conducting features have been produced on Si and SiO2 substrates by irradiation of spin-on palladium acetate, [Pd(O2CCH3)2]3 films with a submicron focused ion beam. The exposures were made with a 20 keV Ga+, focused to a 0.2 micrometer spot. Electrical conductivity measuremnents were made on the resultant features as a function of ion dose for linewidths of one and ten micrometers. The sheet conductivity in the two cases was comparable and increased dramatically in the dose range between 2×1014 and 5×1014 ions/cm2. The conductivity of the exposed lines was further increased after heating in a hydrogen atmosphere. Measurements of carbon and oxygen content indicate that even at the highest ion doses a significant amount of organic material remains. Results are compared to those for 2 MeV He+ and Ne+ broad beam exposures. Potential applications are also discussed.