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Films and Devices Deposited by Hwcvd at Ultra High Deposition Rates

  • A. H. Mahan (a1), Y. Xu (a1), E. Iwaniczko (a1), D. L. Williamson (a2), W. Beyer, J. D. Perkins (a1), M. Vanecek (a3), L. M. Gedvilas (a1) and B. P. Nelson (a1)...

Abstract

The structure of a-Si:H, deposited at rates in excess of 100Å/s by the hot wire chemical vapor deposition (HWCVD) technique, has been examined by x-ray diffraction (XRD), Raman spectroscopy, H evolution, and small-angle x-ray scattering (SAXS). As the film deposition rate (Rd) is increased, we find that the XRD, Raman and the H evolution peak curves are invariant with Rd, and exhibit structure consistent with state-of-the-art, compact a-Si:H films deposited at low Rd. The only exception is the SAXS signal, which increases by a factor of ∼100 over that for our best low Rd films. We relate changes in the film electronic structure (Urbach edge) to the increase in the SAXS signals. We also note the invariance of the saturated defect density versus Rd, and discuss possible reasons why the increase in the SAXS does not play a role in the Staebler-Wronski Effect for this type of material. Finally, device results are presented.

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