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Field-Induced ESR Spectroscopy on Rubrene Single-Crystal Field-Effect Transistors

Published online by Cambridge University Press:  31 January 2011

Hiroyuki Matsui  and
Tatsuo Hasegawa
Hiroyuki Matsui
Affiliation:
matsui.hiroyuki@aist.go.jp, AIST, PRI, Ibaraki, Japan
Tatsuo Hasegawa
Affiliation:
t-hasegawa@aist.go.jp, AIST, PRI, Ibaraki, Japan
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Abstract

We investigate the electron spin resonance (ESR) spectroscopy for the field-induced carriers in rubrene single-crystal field-effect transistors (SC-FETs), and compare the results with those on pentacene thin-film transistors (TFTs). We observe Lorentz-type ESR signal in rubrene SC-FETs whose linewidth is narrowed with increasing gate voltage and temperature. It demonstrates that the ESR linewidth is determined by motional narrowing effect as we reported on pentacene TFTs. Based on the observations, we discuss the multiple trap-and-release (MTR) processes in the two systems with and without grain boundaries.

Keywords

organicsemiconductingelectron spin resonance
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B08-04
Copyright
Copyright © Materials Research Society 2009

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