Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-09-23T13:27:18.433Z Has data issue: false hasContentIssue false
  • English
  • Français

Field Emission Structure with Shottky-Barrier Electrode

Published online by Cambridge University Press:  14 March 2011

Andrey P. Genelev ,
Alexey A. Levitsky  and
Vladimir S. Zasemkov
Andrey P. Genelev
Affiliation:
Krasnoyarsk State Technical Univ., Vacuum Microelectronics Lab., Krasnoyarsk, RUSSIA
Alexey A. Levitsky
Affiliation:
Krasnoyarsk State Technical Univ., Dept. of Radioelectronics, Krasnoyarsk, RUSSIA
Vladimir S. Zasemkov
Affiliation:
Krasnoyarsk State Technical Univ., Vacuum Microelectronics Lab., Krasnoyarsk, RUSSIA
Get access

Abstract

We analyze a non-traditional version of semiconductor field emission structure, based on silicon cones arrays and destined for application in low-voltage vacuum microelectronics devices. In proposed construction, the gate electrode is used as Shottky-barrier contact on silicon tips. Due to Shottkybarrier contact we have obtained depletion layer in tip body under the gate electrode. Therefore variation of the gate electric potential provides the emitter current modulation. Experimental structures were fabricated with about 28000 silicon cones per 1 mm2 by reactive ion etching through a silica mask. Using a quasi two-dimensional model, we have computed these emitter structures. The model takes into account non-uniformity of silicon cone cross-section. Here, we study the influence of emitter tips parameters on the structure performance. Initial results prove the possibility of cathode current electric control with the gate electrode potential. Additionally we have obtained some other electric parameters of the emitter with the Shottky-barrier contact. The results of numerical analysis and experimental study provide a guide for design of proposed field emitter structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R5.6.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Trujillo, J.T., Chakhovskoi, A., Hunt, C.E., Low voltage silicon field emitters with gold gates, Technical Digest of 8th Int. Vacuum Microelectronics Conf., Portland, OR, USA, July 30 -Aug.3, 1995, pp.42–46.Google Scholar
2. Karpov, L.D., Genelev, A.P., Mirgorodski, Y.V., Tikhonsky, A.N., Pattering and Electrical Testing of Field Emission Arrays with Novel Emitter Geometries, Technical Digest of 9th Int. Vacuum Microelectronics Conf., Saint-Petersburg, Russia, July 7 - 12, 1996, pp.542–546.Google Scholar
3. Shockley, W., A unipolar “field-effect” transistor, Proc. of the I.R.E., v.47, 11, 1365 (1959).Google Scholar
4. Barybin, A.A., Levitsky, A.A., Modeling of semiconductor planar devices, MRS VIMI “Engineering, Technology, Economics”, 23, 13 (1984) (in Russian).Google Scholar
5. Barybin, A.A., Perepelovsky, V.V., The Theoretical Treatment of Quasi -Two -Dimensional Equations for Computer Modeling, Proceedings of the Int. Conf. on Mathematical methods in Science and Technology, Vienna, June 3-6, 1995, pp.164–174.Google Scholar
6. Ancona, M.G., Modeling of Thermal Effects in Silicon Field Emitters, Technical Digest of 8th Int. Vacuum Microelectronics Conf., Portland, OR, USA July 30 - Aug.3, 1995, pp.61–65.Google Scholar