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Field Drift Of Plasma-Induced Defects In Phosphorus Doped Si By Reverse Bias Annealing (RBA)

Published online by Cambridge University Press:  15 February 2011

J. Takeuchi ,
Y. Zaitsu ,
T. Shimizu ,
S. Matsumoto  and
K. Wada
J. Takeuchi
Affiliation:
Faculty of Science and Technology, Keio University, Yokohama 223, Japan
Y. Zaitsu
Affiliation:
Faculty of Science and Technology, Keio University, Yokohama 223, Japan
T. Shimizu
Affiliation:
Faculty of Science and Technology, Keio University, Yokohama 223, Japan
S. Matsumoto
Affiliation:
Faculty of Science and Technology, Keio University, Yokohama 223, Japan
K. Wada
Affiliation:
NTT LSI Laboratories, Kanagawa 243–01, Japan
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Abstract

The property of plasma induced defects in phosphorus doped CZ silicon has been investigated by reverse bias annealing (RBA). After CF4 plasma exposure, charge density at the surface decreased since plasma induced negatively charged defects inactivated phosphorus. With the increase of annealing time, inactivated phosphorus area moved into the bulk with reverse bias of −3V. Thus it is clearly observed that negatively charged defects drifted from the surface into the bulk. The thermal dissociation energy for phosphorus-defect complexes is estimated to be 1.22eV from the Arrhenius plot of dissociation rate. These defects are likely to be Si self interstitials or vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 81
Copyright
Copyright © Materials Research Society 1997

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