Skip to main content Accessibility help
×
Home

Field Dependent Electrical Conduction in Metal-Insulator-Metal Devices using Alumina-Silicone Nanolaminate Dielectrics

  • Santosh K. Sahoo (a1) (a2), Rakhi P. Patel (a3) and Colin A. Wolden (a3)

Abstract

Hybrid alumina-silicone nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. In this work, we present the temperature dependent current versus voltage (I-V) measurements of the nanolaminate dielectrics in the range of 200- 310 K to better asses their potential in these applications. Various models are used to know the different conduction mechanisms contributing to the leakage current in these nanolaminate films. It is observed that space charge limited current (SCLC) mechanism is the dominant conduction process in the high field region whereas Ohmic conduction process is contributing to the leakage current in the low field region. The shallow electron trap level energy (E t ) of 0.16 eV is responsible for SCLC mechanism whereas for Ohmic conduction process the activation energy (E a ) for electrons is about 0.22 eV. An energy band diagram is given to explain the dominance of various conduction mechanisms in different field regions in these nanolaminate films.

Copyright

References

Hide All
1. Ortiz, R. P., Facchetti, A., and Marks, T. J., Chem. Rev. 110, 205 (2010).
2. Choi, M. C., Kim, Y., and Ha, C. S., Prog. Polym. Sci. 33, 581 (2008).
3. Dennler, G., Lungenschmied, C., Neugebauer, H., Sariciftci, N. S., Latrèche, M., Czeremuszkin, G., and Wertheimer, M. R., Thin Solid Films 511512, 349 (2006).
4. Deman, A. L., Erouel, M., Lallemand, D., Phaner-Goutorbe, M., Lang, P., and Tardy, J., J. Non-Cryst. Solids 354, 1598 (2008).
5. Hwang, D. K., Choi, W., Choi, J.-M., Lee, K., Park, J. H., Kim, E., Kim, J. H. and Im, S., J. Electrochem. Soc. 154, H933 (2007).
6. Hwang, D. K., Kim, C. S., Choi, J. M., Lee, K., Park, J. H., Kim, E., Baik, H. K., Kim, J. H., and Im, S., Adv. Mater. 18, 2299 (2006).
7. Kukli, K., Ihanus, J., Ritala, M., and Leskelä, M., J. Electrochem. Soc. 144, 300 (1997).
8. Kattelus, H., Ylilammi, M., Saarilahti, J., Antson, J. and Lindfors, S., Thin Solid Films 225, 296 (1993).
9. Rowlette, P. C. and Wolden, C. A., Thin Solid Films 518, 3337 (2010).
10. Choi, J.-M., Lee, K., Hwang, D. K., Park, J. H., Kim, E., and Im, S., Electrochem. Solid-State Lett. 9, G289 (2006).
11. Seol, Y. G., Park, J. S., Tien, N. T., Lee, N. E., Lee, D. K., Lee, S. C., Kim, Y. J., Lee, C. S., and Kim, H., J. Electrochem. Soc. 157, H1046 (2010).
12. Choi, K., Hwang, D. K., Lee, K., Kim, J. H., and Im, S., Electrochem. Solid State Lett. 10, H114 (2007).
13. Sahoo, S. K., Misra, D., Agrawal, D. C., Mohapatra, Y. N., Majumder, S. B., and Katiyar, R. S., J. Appl. Phys. 109, 064108 (2011).
14. Sahoo, S. K., Agrawal, D. C., Mohapatra, Y. N., Majumder, S. B., and Katiyar, R. S., Appl. Phys. Lett. 85, 5001 (2004).
15. Murphy, E. L. and Good, R. H. Jr., Phys, . Rev. 102, 1464 (1956).
16. Sahoo, S. K. and Misra, D., J. Appl. Phys. 110, 084104 (2011).
17. Ding, S. -J., Xu, J., Huang, Y., Sun, Q. -Q., Zhang, D. W., and Li, M. -F., Appl. Phys. Lett. 93, 092909 (2008).
18. Patel, R. P., Chiavetta, D., and Wolden, C. A., J. Vac. Sci. Technol. A 29, 061508–1 (2011).
19. Patel, R. P. and Wolden, C. A., J. Vac. Sci. Technol. A 29, 021012 (2011).
20. Sahoo, S. K., Patel, R. P., and Wolden, C. A., Appl. Phys. Lett. 101, 142903 (2012).
21. Sze, S. M., Physics of Semiconductor Devices, 2 nd ed. (Wiley-Interscience, 1981).
22. Chang, I. Y. -K. and Lee, J. Y. -M., Appl. Phys. Lett. 93, 223503 (2008).
23. Zhang, P., Chen, F., Liu, Y., and Lei, Q., Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 260 (2007).
24. Sahoo, S. K. and Misra, D., Appl. Phys. Lett. 100, 232903 (2012).
25. Zhou, H., Dorman, J. A., Perng, Y. -C., Chang, J. P., and Liu, J., J. Appl. Phys. 111, 064505 (2012).

Keywords

Field Dependent Electrical Conduction in Metal-Insulator-Metal Devices using Alumina-Silicone Nanolaminate Dielectrics

  • Santosh K. Sahoo (a1) (a2), Rakhi P. Patel (a3) and Colin A. Wolden (a3)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed