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Ferroelectric Films and Multilayers with Ultrahigh Dielectric Constants

Published online by Cambridge University Press:  01 February 2011

Kewen Li
Affiliation:
Boston Applied Technologies, Incorporated, Woburn, MA 01801, USA
Kevin Zou
Affiliation:
Boston Applied Technologies, Incorporated, Woburn, MA 01801, USA
Yanyun Wang
Affiliation:
Boston Applied Technologies, Incorporated, Woburn, MA 01801, USA
Hua Jiang
Affiliation:
Boston Applied Technologies, Incorporated, Woburn, MA 01801, USA
Xuesheng Chen
Affiliation:
Department of Physics and Astronomy, Wheaton College, Norton, MA 02766, USA
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Abstract

This work presents a systematic study of ferroelectric films and multilayers made by a metal-organic chemical liquid deposition method. BaxSr1-xTiO3, Pb(Mg1/3Nb2/3)O3-PbTiO3, and Pb(Zn1/3Nb2/3)O3-PbTiO3 films, as well as multilayers incorporated with these materials have been grown at different conditions. Ultrahigh dielectric constant (∼6700) has been achieved in the PMN/PZN-PT multilayers when the sublayer thickness approached to nanometer scale, where interfaces become dominant. When the sublayer materials with desired Curie temperatures were properly chosen, the temperature dependent dielectric constant of the multilayer structure could be greatly reduced. These nanostructured multilayers may find very important applications where temperature variation is a key concern. Pb doping in BaxSr1-xTiO3 was found very efficient in increasing the dielectric constant and reducing the loss. It is believed that the addition of Pb improved the film density and reduced the grain boundary defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Ferroelectric Film Devices, Auciello, Orlando, et al, Harcourt Publishers Ltd, (2002)Google Scholar
2. Kahn, M., Burks, D.P., Burn, I. and Schulze, W.A., in Electronic Ceramics: Processing, Properties, and Applications, Marcel Dekker, Inc., New York, (1988).Google Scholar
3. Cheng, H.F., J. Appl. Phys., 79, 7965 (1996).Google Scholar
4. Bohr, M.T., IEEE Transactions on Nanotechnology, 1, 56, (2002).Google Scholar
5. Li, K.K., Haertling, G.H. and Howng, W.Y., Integrated Ferroelectrics, 3, 81, (1992).Google Scholar
6. Thin Film Ferroelectric Materials and Devices, ed. Ramesh, R., Kluwer Academic Publisher. New York, (1997)Google Scholar
7. Shrout, T.R. and Halliyal, A., Am. Ceram. Soc. Bull., 66, 704, (1987).Google Scholar
8. Jiang, M.C., Wu, T.B., and Wu, J.M., Jpn. J. Appl. Phys., 34, 3153, (1995).Google Scholar
9. Tikhomirov, O., Jiang, H., Levy, J., Phys. Rev. Lett., 89(14), (2002).Google Scholar
10. Jiang, H., Hu, W., Liang, S., Fuflygin, V., Zhao, J., Jia, Q., Groves, J., Arendt, P., Miranda, F., Drehman, A., Wang, S., Yip, P., Integrated Ferroelectrics, 28, 63, (2000).Google Scholar
11. Fuflygin, V., Li, K.K., Wang, F., Jiang, H., Liu, S., and Norris, P., in High-temperature superconductor and novel inorganic materials, ed. Van, G. Tendeloo, Kluwer Academic Publishers, 279, (1998).Google Scholar
12. Gevorgian, S., Carlsson, E., Rudner, S., Wernlund, L. D., Wang, X., Helmersson, U., IEEE Proc. – Microw. Antennas Propag. 143, 397, (1996).Google Scholar