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Fermi Level Inhomogeneities on GaAs(110) Surface Imaged with a Photoelectron Microscope

Published online by Cambridge University Press:  25 February 2011

Changyoung Kim ,
Paul L. King  and
Piero Pianetta
Changyoung Kim
Affiliation:
Stanford Synchrotron Radiation Laboratory P.O. Box 4349, Bin 99, Stanford, CA94309
Piero Pianetta
Affiliation:
Stanford Synchrotron Radiation Laboratory P.O. Box 4349, Bin 99, Stanford, CA94309
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Abstract

A photoelectron microscope operating with a retarding field analyzer has been used to exploit core level energy shifts due to band bending in order to directly image Fermi level variations on n- and p-type cleaved GaAs(110) surfaces. Fermi level maps resolved to better than 10 um indicate lateral variations in the surface Fermi level which are often quite abrupt. In agreement with earlier, lower resolution work [1], Fermi level topography is found to be highly correlated with surface roughness as characterized by SEM, optical microscope and stylus profi lometer. The largest defect derived pinnings encountered to date resut in the Fermi level lying 0.5 eV above the VBM for both n- and p-type GaAs. Low coverage In evaporations have the. effect of reducing Fermi level contrast as Fermi levels in formerly unpinned regions move into the gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 587
Copyright
Copyright © Materials Research Society 1992

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References

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