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Femtosecond Laser-induced Crystallization in As-deposited Ge1Sb2Te4 Films

  • Qin F. Wang (a1) (a2), Lu P. Shi (a2), Su M. Huang (a2), Xiang S. Miao (a2), Kai P. Wong (a2) and Tow C. Chong (a1) (a2)...


Time resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge1Sb2Te4 films. With an average fluence of 24mJ/cm2 a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.



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