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Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H

Published online by Cambridge University Press:  21 February 2011

K. Winer ,
R.Z. Bachrach ,
R.I. Johnson ,
S.E. Ready ,
G.B. Anderson  and
J.B. Boyce
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R.Z. Bachrach
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R.I. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
S.E. Ready
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
G.B. Anderson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J.B. Boyce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The effects of fast-pulse excimer laser annealing of a-Si:H were investigated by measurements of electronic transport properties and impurity concentration depth profiles as a function of incident laser energy density. The dc dark conductivity of laser-annealed, highly-doped a-Si:H increases by a factor of ∼350 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration and which correlates with the onset of hydrogen evolution from and crystallization of the near-surface layer. The similarities between the preparation and properties of laser-crystallized a-Si:H and pc-Si:H are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 183
Copyright
Copyright © Materials Research Society 1990

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References

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