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Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing

  • Grace Huiqi Wang (a1), Eng-Huat Toh (a2), Chih-Hang Tung (a3), Yong-Lim Foo (a4), S. Tripathy (a4), Guo-Qiang Lo (a3), Ganesh Samudra (a5) and Yee-Chia Yeo (a6)...

Abstract

A novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs.

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Keywords

Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing

  • Grace Huiqi Wang (a1), Eng-Huat Toh (a2), Chih-Hang Tung (a3), Yong-Lim Foo (a4), S. Tripathy (a4), Guo-Qiang Lo (a3), Ganesh Samudra (a5) and Yee-Chia Yeo (a6)...

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