Skip to main content Accessibility help
×
Home

Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

  • M. Nishitani (a1), T. Negami (a1), M. Terauchi (a1), T. Wada (a1) and T. Hirao (a1)...

Abstract

Polycrystalline CuInSe2 thin films were prepared by coevaporation of the elements under the irradiation of nitrogenions excited by ECR plasma. Nitrogen atoms were doped uniformly in the obtained CuInSe2 films according to the SIMS analysis. The films showed p-type conduction even in the slightly In-rich region where the coevaporation films without the irradiation of nitrogen ions showed n-type conduction. These results show that p-type CuInSe2 thin films even in the slightly In-rich region can be fabricated by the irradiation of ECR excited nitrogen ions during its ternary coevaporation process.

Copyright

References

Hide All
1. Burgess, R., Chen, W., Dyle, D., Kim, N. and Stanbary, B., Proc.20th IEEE Photovoltaic Specialist Conf.,909(New York, 1988).
2. Mitchell, K., Eberspacher, C., Ermer, J., Pauls, K., Pier, D. and Tanner, D., Proc.4th Int. PV Science and Engineering Conf.,14(Sydoney,1989).
3. Basol, B.M. and Kapur, V.K., IEEE Trans. Electron Devices 37, 418 (1990)
4. Noufi, R., Axon, R., Herrinton, C. and Deb, S., Appl. Phys.Lett. 45,668 (1984).
5. Nishitani, M., Negami, T., Terauchi, M. and Hirao, T., Jpn.J.Appl.Phys. 31, 192 (1992).
6. Kohiki, S., Nishitani, M., Negami, T., Nishikura, K. and Hirao, T., Appl. Phys. Lett. 59, 1794 (1991)

Fabrication of P-Type Cuinse2 Thin Film by MBD Using ECR Excited Nitrogen Ion Source

  • M. Nishitani (a1), T. Negami (a1), M. Terauchi (a1), T. Wada (a1) and T. Hirao (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed