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Fabrication of Polycrystalline Si1−xGex Films on Oxide for Thin-Film Transistors

Published online by Cambridge University Press:  15 February 2011

Julie A. Tsai ,
Andrew J. Tang  and
Rafael Reif
Julie A. Tsai
Affiliation:
Department of Materials Science and Engineering
Andrew J. Tang
Affiliation:
Department of Electrical Engineering and Computer ScienceMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer ScienceMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Polycrystalline-Si1−xGex films have been formed by various methods on oxide-coated Si substrates at temperatures ≤600°C. Compared to thermal growth, plasma deposition of poly-Si1−xGex promotes smoother films with smaller grains having a {200}-dominated texture. Poly-Si1−xGex Alms formed by plasma deposition of amorphous-Si1-xGex followed by a crystallization anneal have an even smoother surface with grain sizes enhanced by an order of magnitude and a weak {111} grain texture. Hydrogen incorporated in amorphous-Si1−xGex evolves completely during crystallization without disrupting the smooth surface morphology. The largest grain sizes (∶1.3μm) are achieved in poly-Si1−xGex films formed by Si+ ion implantation for amorphization with a subsequent recrystallization anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 679
Copyright
Copyright © Materials Research Society 1994

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References

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