Skip to main content Accessibility help
×
Home

Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters

  • H. Hirayama (a1), T. Yamanaka (a1) (a2), A. Kinoshita (a1) (a2), K. Hiraoka (a1) (a2), A. Hirata (a2) and Y. Aoyagi (a1)...

Abstract

Mg-doped quaternary InAlGaN is very attractive for use as p-side layers of 300-nm band ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs), because high hole conductivity is expected to obtain for wide bandgap (~4 eV) InAlGaN with Mg-doping. We fabricated p-n junction diode consisting of Mg-doped In0.02Al0.28Ga0.70N and Si-doped Al0.25Ga0.75N, and demonstrated intense UV emission under CW current injection at room temperature. The rising voltage in I-V curve was around 3.8 V and the breakdown voltage was as high as 10 V. Single peaked intense emission was observed at 340 nm from around InAlGaN/AlGaN p-n junction area without any deep level emission. Also we found that Ni/Au electrode directly fabricated on Mg-doped InAlGaN is useful. From these results, Mg-doped InAlGaN is considered to be very attractive for use as p-side layer of UV-LEDs or LDs.

Copyright

References

Hide All
1. Hirayama, H., Kinoshita, A., Yamabi, T., Enomoto, Y., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett. 80, 2, 207 (2002).
2. Hirayama, H., Enomoto, Y., Kinoshita, A., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett. 80, 9, 1589 (2002).
3. Hirayama, H., Enomoto, Y., Kinoshita, A., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett. 80, 1, 37 (2002).
4. Hirayama, H., Ainoya, M., Kinoshita, A., Hirata, A., and Aoyagi, Y., to be published in Appl. Phys. Lett. March (2002).
5. Kozodoy, P., Smorchkova, Y. P., Hansen, M., Xing, H., DenBaars, S. P., Mishra, U. K., Saxler, A. W., Perrin, R., and Mitchel, W. C., Appl. Phys. Lett. 75, 2444 (1999).
6. Kumakura, K. and Kobayashi, N., Jpn. J. Appl. Phys. 38, L1012 (1999).
7. Kinoshita, A., Hirayama, H., Ainoya, M., Hirata, A. and Aoyagi, Y., Appl. Phys. Lett. 77, 2, 175 (2000).
8. Hirayama, H., Kinoshita, A., Yamanaka, T., Hirata, A. and Aoyagi, Y., Proc. of Mat. Res. Soc. Fall Meeting G2.8 (2000).
9. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, 10024 (1997).

Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters

  • H. Hirayama (a1), T. Yamanaka (a1) (a2), A. Kinoshita (a1) (a2), K. Hiraoka (a1) (a2), A. Hirata (a2) and Y. Aoyagi (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed