Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-30T17:33:06.366Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters

Published online by Cambridge University Press:  21 March 2011

H. Hirayama ,
T. Yamanaka ,
A. Kinoshita ,
K. Hiraoka ,
A. Hirata  and
Y. Aoyagi
H. Hirayama
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
T. Yamanaka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
A. Kinoshita
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
K. Hiraoka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
A. Hirata
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
Y. Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
Get access

Abstract

Mg-doped quaternary InAlGaN is very attractive for use as p-side layers of 300-nm band ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs), because high hole conductivity is expected to obtain for wide bandgap (~4 eV) InAlGaN with Mg-doping. We fabricated p-n junction diode consisting of Mg-doped In0.02Al0.28Ga0.70N and Si-doped Al0.25Ga0.75N, and demonstrated intense UV emission under CW current injection at room temperature. The rising voltage in I-V curve was around 3.8 V and the breakdown voltage was as high as 10 V. Single peaked intense emission was observed at 340 nm from around InAlGaN/AlGaN p-n junction area without any deep level emission. Also we found that Ni/Au electrode directly fabricated on Mg-doped InAlGaN is useful. From these results, Mg-doped InAlGaN is considered to be very attractive for use as p-side layer of UV-LEDs or LDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I4.10.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hirayama, H., Kinoshita, A., Yamabi, T., Enomoto, Y., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett. 80, 2, 207 (2002).Google Scholar
2. Hirayama, H., Enomoto, Y., Kinoshita, A., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett. 80, 9, 1589 (2002).Google Scholar
3. Hirayama, H., Enomoto, Y., Kinoshita, A., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett. 80, 1, 37 (2002).10.1063/1.1432112Google Scholar
4. Hirayama, H., Ainoya, M., Kinoshita, A., Hirata, A., and Aoyagi, Y., to be published in Appl. Phys. Lett. March (2002).Google Scholar
5. Kozodoy, P., Smorchkova, Y. P., Hansen, M., Xing, H., DenBaars, S. P., Mishra, U. K., Saxler, A. W., Perrin, R., and Mitchel, W. C., Appl. Phys. Lett. 75, 2444 (1999).10.1063/1.125042Google Scholar
6. Kumakura, K. and Kobayashi, N., Jpn. J. Appl. Phys. 38, L1012 (1999).Google Scholar
7. Kinoshita, A., Hirayama, H., Ainoya, M., Hirata, A. and Aoyagi, Y., Appl. Phys. Lett. 77, 2, 175 (2000).Google Scholar
8. Hirayama, H., Kinoshita, A., Yamanaka, T., Hirata, A. and Aoyagi, Y., Proc. of Mat. Res. Soc. Fall Meeting G2.8 (2000).Google Scholar
9. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, 10024 (1997).Google Scholar