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Fabrication of Nitrided Mask on GaAs surface and Its Machinability for STM lithography

  • Yo Yamamoto (a1), Sota MATSUOKA (a2), Toshiyuki Kondo (a3), Takahiro Maruyama (a4) and Shigeya Naritsuka (a5)...

Abstract

A nitridation mask on a GaAs surface was prepared using RF-MBE and its machinability by STM lithography was studied. A 5.2 nm thick crystal-like layer was formed at 350°C, and was modified by STM at a sample bias of ±80V with good size reliability, which was sufficiently fine for realizing dislocation-free heteroepitaxial growth of GaAs / Si. The mask was maintained up to 620°C under As flux exposure at 1.5 × 10−4 Pa.

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Keywords

Fabrication of Nitrided Mask on GaAs surface and Its Machinability for STM lithography

  • Yo Yamamoto (a1), Sota MATSUOKA (a2), Toshiyuki Kondo (a3), Takahiro Maruyama (a4) and Shigeya Naritsuka (a5)...

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