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Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

  • K. Nomura (a1) (a2), H. Ohta (a2), K. Ueda (a1), T. Kamiya (a1) (a2), M. Hirano (a2) and H. Hosono (a1) (a2)...

Abstract

Transparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

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Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

  • K. Nomura (a1) (a2), H. Ohta (a2), K. Ueda (a1), T. Kamiya (a1) (a2), M. Hirano (a2) and H. Hosono (a1) (a2)...

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