Hostname: page-component-7c8c6479df-r7xzm Total loading time: 0 Render date: 2024-03-19T03:00:31.089Z Has data issue: false hasContentIssue false

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

Published online by Cambridge University Press:  11 February 2011

K. Nomura
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
H. Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
K. Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan
T. Kamiya
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
M. Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
H. Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
Get access

Abstract

Transparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Prins, M. W. J., Grosse-Holz, K. -O., Muller, G., Cillessen, J. F. M., Giesbers, J. B., Weening, R. P. and Wolf, R. M., Appl. phys. Lett. 68, 3650(1996).Google Scholar
2. Prins, M. W. J., Zinnemers, S. E., Cillessen, J. F. M. and Giesbers, J. B., Appl. Phys. Lett. 70, 458(1997).Google Scholar
3. Kimizuka, N., Isobe, M. and Nakamura, M., J. Solid State Chem. 116, 170 (1995).Google Scholar
4. Li, C., Bando, Y., Nakamura, M., Onoda, M. and Kimizuka, N., J. Solid State Chem. 139, 347 (1998).Google Scholar
5. Ohta, H., Nomura, K., Orita, M., Hirano, M., Ueda, K., Suzuki, T., Ikuhara, Y. and Hosono, H., Adv. Funct. Mater. (In press).Google Scholar
6. Nomura, K., Ohta, H., Ueda, K., Orita, M., Hirano, M., and Hosono, H., Thin Solid Films 411, 147(2000).Google Scholar
7. Hiramatsu, H., Ueda, K., Ohta, H., Orita, M., Hirano, M. and Hosono, H., Appl. Phys. Lett. 81, 598(2002).Google Scholar
8. Ohta, H., Tanji, H., Orita, M., Hosono, H. and Kawazoe, H., Mater. Res. Soc. Symp. Proc. 570, 309 (1999).Google Scholar
9. Orita, M., Ohta, H., Hirano, M., Narushima, S., and Hosono, H., Philo. Mag. B81, 501 (2001).Google Scholar