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Fabrication of InAs Wires in Nanochannel Glass

Published online by Cambridge University Press:  10 February 2011

A. D. Berry
Affiliation:
Chemistry Division, Code 6174
R. J. Tonucci
Affiliation:
Optical Sciences Division, Code 5614 Naval Research Laboratory Washington DC 20375
P. P. Nguyen
Affiliation:
Optical Sciences Division, Code 5614 Naval Research Laboratory Washington DC 20375
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Abstract

Indium arsenide wires have been fabricated in a glass host consisting of a high density array of uniformly shaped channels in a matrix glass. Reactions between organoindium compounds and arsine have produced polycrystalline InAs with crystallite sizes of approximately 10 nanometers when annealed at 400°C. At higher annealing temperatures, the wires exhibit an increase in surface porosity and grain size.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Kher, S.S. and Wells, R.L., Chem. Mater. 6, 2056 (1994).Google Scholar
2. Alivisatos, A.P., Science 271, 933 (1996).Google Scholar
3. Murray, C.B., Kagan, C.R., Bawendi, M.G., Science 270, 1335 (1995).Google Scholar
4. Tonucci, R.J., Justus, B.L., Campillo, A.J., Ford, C.E., Science 258, 783, (1992).Google Scholar
5. Eisch, J.J., J. Am. Chem. Soc. 84, 3605, (1962).Google Scholar
6. Care should be used in handling these trialkylindium compounds, which are pyrophoric when exposed to air, and in the use of arsine, which is an extremely toxic gas.Google Scholar
7. Gallium arsenide nanowires fabricated within the NCG host structure by a process analogous to that described above using Me3Ga in place of Et3In or i-Bu3In exhibited very fine grain structure yielding high strength, high aspect-ratio nanowires that survived the fracture process more completely than those of InAs. Chemical analysis of the GaAs system indicated ∼2–3% carbon and less than 1% hydrogen. X-ray diffraction gave similar results for GaAs found within the channels and for residual powder outside the channels. To be submitted for publication.Google Scholar
8. Beachley, O.T. and Coates, G.E., J. Chem. Soc., 3241, (1965).Google Scholar
9. Joint Committee on Powder Diffraction Standards File No. 15–869, InAs; No. 4–784, Al.Google Scholar