Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-20T20:29:37.289Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Hollow High Aspect Ratio Metal Microstructure Arrays

Published online by Cambridge University Press:  25 February 2011

J. M. Calvert ,
J. H. Georger JR ,
M. L Rebbert ,
M. A. Anderson ,
D. Park ,
J. J. Hickman ,
C. S. Dulcey  and
M. C. Peckerar
J. M. Calvert
Affiliation:
Center for Bio/Molecular Science and Engineering, Code 6090, Naval Research Laboratory, Washington, DC 20375–5000
J. H. Georger JR
Affiliation:
Geo-Centers, Inc., Ft. Washington, MD 20744
M. L Rebbert
Affiliation:
Nanoelectronics Process Facility, Code 6804, NRL
M. A. Anderson
Affiliation:
Geo-Centers, Inc., Ft. Washington, MD 20744
D. Park
Affiliation:
Nanoelectronics Process Facility, Code 6804, NRL
J. J. Hickman
Affiliation:
Science Applications International Co., McLean, VA 22102
C. S. Dulcey
Affiliation:
Center for Bio/Molecular Science and Engineering, Code 6090, Naval Research Laboratory, Washington, DC 20375–5000
M. C. Peckerar
Affiliation:
Nanoelectronics Process Facility, Code 6804, NRL
Get access

Abstract

A process has been developed to produce regular arrays of hollow metal microstructures on substrates of choice. Optical lithography was used to define high aspect ratio structures in photoresist. The resist structures were selectively metallized by electroless (EL) deposition such that metal was deposited only on the sidewalls of the resist and on the surface of the substrate. Dissolution of the polymeric photoresist resulted in regular arrays of hollow metal cylinders and cones with geometries and structure spacings determined by the original resist structures. Characterization of metallized microstructures using surface analytical techniques and SEM is presented. Arrays of microstructures with 500–1000 Å thick EL Ni walls and aspect ratios (height/tip diameter) of 8:1 are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 381
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shipley, C. R. Jr, Plating and Surface Finishing 71, 92 (1984).Google Scholar
2. Schnur, J. M., et. al., U. S. Patent 4,911,981 (1990).Google Scholar
3. Schnur, J. M., et. al., Thin Solid Films 151, 181, (1987).Google Scholar
4. Calvert, J. M., et. al., Scanning 12, 1–60 (1990).Google Scholar
5. Price, R. R and Brady, R. F. Jr, U. S. Patent 5,048,382 (1991).Google Scholar
6. Behroozi, F., et. al., J. Appl. Phys. 68, 3688 (1990).Google Scholar
7. Price, R., et. al., Scanning 12, 1–66, (1990).Google Scholar
8. Kirkpatrick, D. A., et. al., IEEE Trans. Plasma Sci. 18, 749 (1991).Google Scholar
9. Price, R. R. and Schoen, P. E., J. Mater. Res., in press.Google Scholar
10. Chow, G. M., et. al., Mat. Sci. Eng. A, in press.Google Scholar
11. Schnur, J. M., et. al., U. S. Patent 5,079,600 (1992).Google Scholar
12. Dulcey, C. S., et. al., Science 252, 551 (1990).CrossRefGoogle Scholar
13. Calvert, J. M., et. al. Soüd State Technology 34(10), 77 (1991).Google Scholar
14. Dressick, W. J., et. al., Proc. MRS Spring 1992 Mtg., Paper C8.22, in press.Google Scholar
15. Calvert, J. M., Pehrsson, P., Dulcey, C. S., and Peckerar, M. C., Proc. MRS Spring 1992 Mtg., Paper C12.3, in press.Google Scholar
16. Gulla, M. and Sricharoenchaikit, P., European Patent 90105228.2 (1990)Google Scholar
17. Anderson, M. A., et. al, manuscript in preparation.Google Scholar
18. For further SAES analysis of the elemental composition of the metallized microstructures and XPS depth profiling of the various interfaces, see: Hickman, J. J., et. al. Proc. MRS Spring 1992 Mtg., Paper C5.36, in press.Google Scholar