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Fabrication of High-Resolution Nuclear Detectors Using 4H-SiC n-type Epitaxial Layers

  • Kelvin J. Zavalla (a1), Sandeep K. Chaudhuri (a1) and Krishna C. Mandal (a1)

Abstract

High resolution Schottky barrier detectors for alpha particles have been fabricated on 20 μm n-type 4H-SiC epitaxial layers. Schottky barrier contact structure was accomplished by deposition of 10 nm nickel on the Si face of the epilayers. The detectors were characterized for structural, electrical, and spectroscopic properties. Scanning electron microscopy and Nomarski optical microscopy revealed a micropipe density lower than 1 cm-2. The current-voltage (I-V) characteristics of the device exhibited very low leakage current of the order of 6.5 pA at an operating bias of 90 V. C-V measurements revealed a typical effective doping concentrations of 2.4 × 1014 cm-3 in these epilayers. The detectors were evaluated for alpha particles detection using a 241Am source. An energy resolution of ∼0.98% for 5.48 MeV alpha particles was observed. The separate contribution of charge carrier drift and diffusion to the total charge collection efficiency has been calculated in these detectors following a drift-diffusion model. Detailed electronic noise analysis in terms of equivalent noise charge (ENC) was carried out to study the effect of various noise components that contribute to the total electronic noise in the detection system. Effect of shaping time, presence of source and bias on the ENC has been studied in details.

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Ruddy, F. H., Seidel, J. G., Chen, H., Dulloo, A. R., and Ryu, S-H., “High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors,” IEEE Trans. Nucl. Sci., vol. 53, no. 3, pp. 1713–1718, June , 2006
Bertuccio, G. and Casiraghi, R., “Study of silicon carbide for X-ray detection and spectroscopy,” IEEE Trans. Nucl. Sci., vol. 50, no. 1, pp. 175185, Feb, 2003.
Chaudhuri, S. K., Krishna, R. M., Zavalla, K. J., and Mandal, K. C., “Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles,” Nucl. Instrum. Methods Phys. Res. A, vol. 701, pp. 214220, Nov, 2012.
Dulloo, A. R., Ruddy, F. H., Seidel, J. G., Adams, J. M., Nico, J. S., and Gilliam, D. M., “The thermal neutron response of miniature silicon carbide semiconductor detectors,” Nucl. Instrum. Methods Phys. Res. A, vol. 498, no. 1-3, pp. 415423, Feb, 2003.
Ivanov, A. M., Kalinina, E. V., Konstantinova, A. O., Onushkin, G. A., Strokan, N. B., Kholuyanov, G. F., and Hallén, A., “High-resolution short range ion detectors based on 4H-SiC films,” Technical Physics Letters, vol. 30, no. 7, pp. 575577, Jan, 2004.
Ha, J. H., Kang, S. M., Park, S. H., Kim, H. S., Lee, N. H., Song, T-Y., “A self-biased neutron detector based on an SiC semiconductor for a harsh environment,” Appl. Rad. Isotopes, vol. 67, no. 7-8, pp. 12041207, Jul-Aug, 2009.
Chaudhuri, S. K., Zavalla, K. J., and Mandal, K. C., “Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach,” Appl. Phys. Lett., vol. 102, no. 3, pp. 031109031113, Jan, 2013.
Bertuccio, G. and Pullia, A., “A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors,” Rev. Sci. Instrum., vol. 64, no. 11, pp. 32943298, Nov, 1993.
Rhoderick, E. H., Williams, R.H., Metal-Semiconductor Contacts, Clarendo, Oxford, 1988.
Breese, M. B. H., “A theory of ion beam induced charge collection,” J. Appl. Phys., vol. 74, no. 6, pp. 3789–3799, Sep , 1993.
Ziegler, J. F., Biersack, J., Littmark, U., The Stopping and Range of Ions in Matter, Pergamon Press (1985).

Keywords

Fabrication of High-Resolution Nuclear Detectors Using 4H-SiC n-type Epitaxial Layers

  • Kelvin J. Zavalla (a1), Sandeep K. Chaudhuri (a1) and Krishna C. Mandal (a1)

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