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Fabrication of High Quality Poly-Si From Fluorinated Precursors

Published online by Cambridge University Press:  01 January 1993

Shin-Ichi Ishihara ,
Deyan He ,
Tetsuya Akasaka ,
Yuzoh Araki  and
Isamu Shimizu
Shin-Ichi Ishihara
Affiliation:
The Graduate School, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama-city, Japan
Deyan He
Affiliation:
The Graduate School, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama-city, Japan
Tetsuya Akasaka
Affiliation:
The Graduate School, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama-city, Japan
Yuzoh Araki
Affiliation:
The Graduate School, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama-city, Japan
Isamu Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama-city, Japan
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Abstract

Poly-Si thin films with grains 100–200 nm in dia. showing a highly ordered texture were grown from fluorinated precursors, SiFnHm (n+m=3), on a glass substrate at 300–400 °C with the aid of atomic hydrogen. According to the in situ observation by ellipsometry, the reconstruction was undergone in a solid phase stimulated by impinging atomic hydrogens within a thin layer of about 10 nm thick owing to the strong chemical interaction of the pair of H and F in Si-network. Both H and F were released efficiently from the network to the levels of 2 × 1020 cm−3 and (2−5) × 1019 cm−3, respectively. Dangling bonds were also efficiently passivated down to 4 × 1016 cm−3 with hydrogens diffused through the network. P-doped films showing electrical conductivity of 10−2 S/cm (300 °K) with the activation energy of 0.24 eV was obtained by alternately repeating the deposition of thin layer and the treatment with atomic hydrogens.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 79
Copyright
Copyright © Materials Research Society 1993

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References

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