Hostname: page-component-7479d7b7d-jwnkl Total loading time: 0 Render date: 2024-07-11T15:47:33.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

Published online by Cambridge University Press:  17 March 2011

H. Miyake ,
H. Mizutani ,
K. Hiramatsu ,
Y. Iyechika ,
Y. Honda  and
T. Maeda
H. Miyake
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507, Japan
H. Mizutani
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507, Japan
K. Hiramatsu
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507, Japan
Y. Iyechika
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, Tsukuba 300-3294, Japan
Y. Honda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, Tsukuba 300-3294, Japan
T. Maeda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, Tsukuba 300-3294, Japan
Get access

Abstract

GaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G5.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 35 (1986).Google Scholar
2. Nishinaga, T., Nakano, T. and Zhang, S., Jpn. J. Appl. Phys. 27, L964 (1988).Google Scholar
3. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A., Jpn. J. Appl. Phys. 36, L899 (1997).Google Scholar
4. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71, 2259 (1997).Google Scholar
5. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K., Jpn. J. Appl. Phys. 36, L1568 (1997).Google Scholar
6. Nam, O. H., Bremser, M. D., Zheleva, T. S. and Davis, R. F.: Appl. Phys. Lett. 71, 2638 (1997).Google Scholar
7. Hiramatsu, K., Nishiyama, K., Motogaito, A., Miyake, H., Y. Iyechika and Maeda, T., Phys. Stat. Sol. (a) 176, 535 (1999).Google Scholar
8. Beaumont, B., Bousquet, V., Vennéguès, P., Vaille, M., Bouillé, A., Gibart, P., Dassonneville, S., Amokrane, A. and Sieber, B., Phys. Stat. Sol. (a) 176, 567 (1999).Google Scholar
9. Hiramatsu, K., Nishiyama, K., Onishi, M., Mizutan, H., Narukawa, M., Motogaito, A., Miyake, H., Iyechika, Y. and Maeda, T., J. Crystal Growth, 221, 316 (2000).Google Scholar
10. Vennéguès, P., Beaumont, B., Bousquet, V., Vaille, M. and Gibart, P., Appl. Phys. Lett. 87, 4175 (2000).Google Scholar
11. Miyake, H., Motogaito, A. and Hiramatsu, K., Jpn. J. Appl. Phys. 38, L1000 (1999).Google Scholar
12. Kawaguchi, Y., Shimizu, M., Yamaguchi, M., Hiramatsu, K., Sawaki, N., Taki, W., Tsuda, H., Kuwano, N., Oki, K., Zheleva, T. and Davis, R. F., J. Crystal. Growth 189/190, 24 (1998).Google Scholar
13. Kagawa, K., Tsukamoto, K., Kuwano, N., Oki, K. and Hiramatsu, K., in Proc. of IWN 2000, IPAP Conf. Series 1, 471 (2000).Google Scholar
14. Nam, O. H., Zheleva, T. S., Bremser, M. D., Yhomson, D.B. and Davis, R. F., Mat. Res. Soc. Symp Vol.482, 301 (1998).Google Scholar
15. Usui, A., Sunakawa, H., Kuroda, N., Kimura, A., Sakai, A. and Yamaguchi, A., in proc. of 2nd Int. Symp.on Blue Laser and Light Emitted Diodes, p.17 (1998).Google Scholar
16. Miyake, H., Mizutan, H., Nishiyama, K., Motogaito, A., Hiramatsu, K., Iyechika, Y. and Maeda, T., in Proc. of IWN 2000, IPAP Conf. Series 1, 324 (2000).Google Scholar