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Fabrication Of Flat RF MEMS Switch Membrane By Minimizing Of Stress Gradients In The Au Membrane Structure

  • Jong-Seok Kim (a1), Hoon Song (a1), Jin Woo Cho (a2), Eun Sung Lee (a1), Sun Hee Park (a1), Mun Chul Lee (a1), Dong Hwa Shim (a1), In Sang Song (a1), Jung Woo Kim (a3), Seok Jin Kang (a1) and Ki Moo Song (a1)...

Abstract

RF MEMS(Micro-Electro-Mechanical-System) switch technology is one of powerful solution for future RF systems. This technology provides low insertion loss, High linearity and broad bandwidth. Wide driving membrane used MEMS switch can reduce driving voltage but it is easy to bend because of the stress gradient. In order to solve this problem we fabricated Au cantilever in various sputtering condition and various substrate materials. As a result of this experiment, we fabricated cantilever which was bent within 1 um, with 2 um thickness and 340 um length. We applied this condition to RF MEMS switch and we fabricated switch membrane within 1 um bend, under 10MPa stress gradient.

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References

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[1] Maluf, N., “An Introduction to micro-mechanical systems engineering”. Norwood, MA: Artech House, 2000, CH. 1.

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