Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-25T02:27:59.058Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Field Emitter Arrays of Carbon Nanotubes Aligned on Patterned Substrates using Self-Assembly Monolayer

Published online by Cambridge University Press:  15 February 2011

Ok-Joo Lee ,
Soo-Hwan Jeong  and
Kun-Hong Lee
Ok-Joo Lee
Affiliation:
Department of Chemical Engineering, Computer & Electrical Engineering Division, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
Soo-Hwan Jeong
Affiliation:
U_Team, Samsung Advanced Institute of Technology (SAIT), P. O. Box 111, Suwon, 440-600, Korea
Kun-Hong Lee
Affiliation:
Department of Chemical Engineering, Computer & Electrical Engineering Division, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
Get access

Abstract

Field emissions from the singlewalled carbon nanotubes (SWNTs) attached on various patterned substrates such as silicon wafer and polymer film, are reported. SWNTs were cut into sub-micron length by sonication in an acidic solution. The SWNT emitters were aligned on Au surface at room temperature by self-assembly monolayer technique. The field emission measurements in a silicon wafer and a polymer film showed that the turn-on fields were 2.8 V/ νm and 3.9 V/ νm at the emission current density of 10 μA/cm2, respectively. The current densities were 0.9 mA/cm2 and 1.6 mA/cm2 at 6.0 V/ νm. This room temperature process is suitable for the fabrication of flexible field emission devices with carbon nanotubes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 772: Symposium M – Nanotube-Based Devices , 2003 , M7.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Heer, W. A. de, Chatelain, A. and Ugarte, D., Science 270, 1179 (1995)Google Scholar
2. Collins, P. G., Zettle, A., Bando, H., Thess, A., and Smally, R. E., Science 278, 100 (1997)Google Scholar
3. Saito, Y. and Uemura, S., Carbon 38, 169 (2000)Google Scholar
4. Bonard, J.-M., Stockli, T., Maier, F., Heer, W. A. De, Chatelain, A., Ugarte, D., Salvetat, J. P., and Forro, L., Phys. Rev. Lett. 81, 1441 (1998)Google Scholar
5. Choi, W. B., Chung, D. S., Kang, J. H., Kim, H. Y., Jin, Y. W., Han, I. T., Lee, Y. H., Jung, J. E., Lee, N. S., Park, G. S. and Kim, J. M., Appl. Phys. Lett. 75, 3129 (1999)Google Scholar
6. Liu, Z., Shen, Z., Zhu, T., Hou, S., and Ying, L., Langmuir 16, 3569 (2000)Google Scholar
7. Yu, X., Mu, T., Huang, H., Liu, Z., and Wu, N., Surface Science 461, 199 (2000)Google Scholar
8. Lee, O.-J., Jeong, S.-H. and Lee, K.-H., Appl. Phys. A 76, 599 (2003)Google Scholar
9. Shi, Z., Lian, Y., Zhou, X., Gu, Z., Zhang, Y., Iijima, S., Gong, Q., Li, H. and Zhang, S., Chem. Commun. 461 (2000)Google Scholar
10. Gadzuk, J. W. and Plummer, E. W., Rev. Mod. Phys. 45, 487 (1973)Google Scholar
11. Cui, J. B., Teo, K. B. K., Tsai, J. T. H., Robertson, J. and Milne, W. I., Appl. Phys. Lett. 77, 1831 (2000)Google Scholar