CuInSe2 films were prepared by the three-stage process using the evaporation of In2Se3, Cu2Se and Se. In the third stage, the depth of Cu-poor surface region was precisely adjusted by the control of the evaporation rate of In2Se3 and Se. The interface between Cu-poor surface region and stoichiometric CuInSe2 film was characterized using AES, microEDAX, and RBS. The 9.59% efficiency was achieved in the 0.16 cm2 area cell. The efficiency is the same level of the CIS cell prepared using the element coevaporation, opening up the application of binary compounds for highly efficient Cu(In,Ga)Se2 cells.