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Fabrication of a-Si:H Tfts at 120°C on Flexible Polyimide Substrates

Published online by Cambridge University Press:  10 February 2011

Andrei Sazonov ,
Arokia Nathan ,
R.V.R. Murthy  and
S.G. Chamberlain
Andrei Sazonov
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, asazonov@venus.uwaterloo.ca
Arokia Nathan
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, asazonov@venus.uwaterloo.ca
R.V.R. Murthy
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, asazonov@venus.uwaterloo.ca
S.G. Chamberlain
Affiliation:
DALSA Inc., 605 McMurray Rd., Waterloo, Ontario N2V 2E9, Canada
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Abstract

The fabrication of large-area thin-film transistor (TFT) arrays on thin flexible plastic substrates requires deposition of thin film layers at relatively low temperatures since the upper working temperature of low-cost plastic films should not exceed ∼200°C. In this paper, we report a fabrication process of a-Si:H TFTs at 120°C on flexible polyimide substrates for large-area imaging applications.

Kapton HN (DuPont) films 50 and 125 μm thick and 3 inches in diameter, were used as substrates. Both sides of the polyimide substrate were first covered with 0.5 μm thick a-SiNx. The TFT structure includes: 120 nm thick room-temperature sputtered Al gate, 250 nm thick PECVD deposited a-SiNx for the gate dielectric, 50 nm thick a-Si:H deposited by PECVD from silane-hydrogen gas mixture, 50 nm thick n+ a-Si:H source- and drain contacts, and roomtemperature sputtered Al top contact metallization. We used dry etching for all layers except for the gate and top metal, which were patterned using wet etchants. For purpose of TFT performance comparison, Coming 7059 glass substrates were used.

The performance of the fabricated TFT and its improvement with use of optimized a-Si:H and a-SiNx quality will be presented along with a discussion of the intrinsic mechanical stress in the thin film layers will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 375
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Parsons, G.N., Yang, C.-S., Klein, T.M., and Smith, L. in Amorphous and Microcrystalline Silicon Technology - 1998, edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., and Wagner, S. (Mater.Res.Soc.Proc. 507, Warrendale, PA 1999), p. 19–24.Google Scholar
2. Gleskova, H., Wagner, S., and Suo, Z. in Flat-Panel Display Materials - 1998, edited by Parsons, G.N., Tsai, C.-C., Fahlen, T.S., and Seager, C.H. (Mater.Res.Soc.Proc. 508, Warrendale, PA 1998), p. 73–78.Google Scholar
3. Thomasson, D.B., Bonse, M., Koval, R.J., Huang, J.R., Wronski, C.R., and Jackson, T.N., 56th Annual Device Research Conference Digest (June 1998), pp. 126–127.Google Scholar
4. Street, R.A., Hydrogenated Amorphous Silicon, Cambridge University Press, Cambridge, 1991, pp. 18–61.Google Scholar
5. Sriniwasan, E., Lloyd, D.A., and Parsons, G.N., J.Vac.Sci.Technol. A 15, p. 77 (1997).Google Scholar
6. Park, B., Murthy, R.V.R., Sazonov, A., Nathan, A., and Chamberlain, S.G. in Amorphous and Microcrystalline Silicon Technology - 1998, edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., and Wagner, S. (Mater.Res.Soc.Proc. 507, Warrendale, PA 1999), p. 237–242.Google Scholar
7. Lucovsky, G., and Pollard, W.B. in The Physics of Hydrogenated Amorphous Silicon II, edited by Joannopoulos, J.D., and Lucovsky, G. (Springer, Berlin 1984), p. 334.Google Scholar