Skip to main content Accessibility help
×
Home

Fabrication and Modeling of Gated Field-Emission Devices Using Carbon Nanotubes on Si Substrates

  • Javad - Koohsorkhi (a1), Shams - Mohajerzadeh (a1), Yaser - Abdi (a1) and Pouya - Hashemi (a1)

Abstract

We report fabrication and modeling of self-defined gated filed-emission devices based on encapsulated vertically aligned carbon nanotubes grown on Si substrates with a PECVD method. The electrical characteristics of such devices have been theoretically modeled using an expanded Fowler-Nordheim tunneling effect. Devices fabricated here, resemble vacuum tubes where CNTs act as cathode. They show a saturation behavior for large distances between anode and cathode electrodes, making them suitable for transistor applications. The physical properties of the CNTs were investigated using SEM, evidencing the evolution of vertical CNTs with a tip-growth mechanism. The triode structure proposed in this paper uses CNT as the field-emission electrode (cathode), the surrounding Cr as the gate and a second Si substrate as the anode electrode. The emission current from the nanotube tips is significantly controlled by applying a negative voltage between CNT and the gate. The effect of the anode-cathode and gate-cathode voltages on the emission current has been experimentally observed and theoretically modeled using an expanded F-N effect.

Copyright

References

Hide All
1. Iiijima, S., Helical microtubule of graphitic carbon, Nature, 354, 5658, (1991)
2. Takikawa, H, Ikeda, M, Hirahara, K, Hibi, Y, Tao, Y, Ruiz, Jr. Fabrication of single-walled carbon nanotubes and nanohorns by means of a torch arc in open air. Physica B: Condensed Matter 2002, 323(1):277279.
3. Javey, A, Kim, H, Brink, M, Wang, Q, Ural, A, Guo, J. et.al. High- κ-dielectrics for advanced carbon nanotube transistors and logic gates. Nature Materials, 2002, 1(4):241246.
4. Mintmire, JW, White, CT. “Universal density of states for carbon nanotubes”, Phys. Rev. Lett. 1998, 81(12):25062508.
5. Ch. Postma, HW, Teepen, T, Yao, Z, Grifoniu, M, Dekker, C.Carbon nanotube singleelectron transistors at room temperature”, Science 2001, 292(5527):7679.
6. Burke, P.J., “An RF Circuit Model for Carbon Nanotubes”, IEEE Nano, 393396, 2002
7. Franklin, RN, Wang, Q, Tombler, T, Javey, A, Shim, M, Dai, H. “Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems”, Appl. Phys. Lett 2002, 81(5):913915.
8. Guo, J, Datta, S, Lundstrom, M, Brink, M, McEuen, P, Javey, A, et.al. “Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors” International Electron Device Meeting 2002, 711714.
9. Javey, A, Guo, J, Wang, Q, lundstrom, M, Dai, H. “Ballistic carbon nanotube field-effect transistorsNature, 2003; 424(6949):654657
10. Arvan, B, Khakifirooz, A, Tarighat, R, Mohajerzadeh, S, Goodarzi, A, Asl. Soleimani, E. et.al. “Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4, Material Science and Engineering B 2003; 109(1):17230.
11. de Heer, W.A., Bonard, J.-M., Stockli, T., Chatelain, A., Forro, L., Ugarte, D.; “Carbon nanotube films: electronic properties and their application as field emittersZ. Phys. D 1997, 40, 418420
12. N., De Jonge, N.; J.-M., Bonard, “Carbon nanotube electron sources and applicationsPhilosophical Transactions of the Royal Society London, Series A ; 2004, . 362, p 2239–66.
13. Y., Abdi, S., Mohajerzadeh, H., Hoseinzadegan and J., Koohsorkhi, “PECVD-grown Carbon-Nanotubes on silicon substrates and their applications for nano-lithography”, Appl. Phys. Lett. 88, p053124, 2006.

Keywords

Fabrication and Modeling of Gated Field-Emission Devices Using Carbon Nanotubes on Si Substrates

  • Javad - Koohsorkhi (a1), Shams - Mohajerzadeh (a1), Yaser - Abdi (a1) and Pouya - Hashemi (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed