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Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate

Published online by Cambridge University Press:  01 February 2011

Yasuhiro Shibata ,
Atsushi Motogaito ,
Hideto Miyake ,
Kazumasa Hiramatsu ,
Youichiro Ohuchi ,
Hiroaki Okagawa ,
Kazuyuki Tadatomo ,
Tatsuya Nomura ,
Yutaka Hamamura  and
Kazutoshi Fukui
Yasuhiro Shibata
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Atsushi Motogaito
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Youichiro Ohuchi
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4–3 Ikejiri, Itami, Hyogo 664–0027, Japan
Hiroaki Okagawa
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4–3 Ikejiri, Itami, Hyogo 664–0027, Japan
Kazuyuki Tadatomo
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4–3 Ikejiri, Itami, Hyogo 664–0027, Japan
Tatsuya Nomura
Affiliation:
Nikon Corporation, Precision Equipment Company, 1–10–1 Asamizodai, Sagamihara, Kanagawa 228–0828, Japan
Yutaka Hamamura
Affiliation:
Nikon Corporation, Precision Equipment Company, 1–10–1 Asamizodai, Sagamihara, Kanagawa 228–0828, Japan
Kazutoshi Fukui
Affiliation:
Research Center for Development of Far-Infrared Region, Fukui University, 3–9–1 Bunkyo, Fukui, Fukui 910–8507, Japan
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Abstract

GaN ultraviolet (UV) detectors were fabricated on a freestanding GaN substrate with low dislocation density. The resulting dark current density was below 1 nA/cm-2 at -8 V reverse bias, which was about 3 orders of magnitude lower than that of a similar detector made on a sapphire substrate. Moreover, the ideality factor was nearer to unity than the device on a sapphire substrate. In addition, by comparing the GaN-based device to a commonly used Si photodetector, we found that the GaN device had a lower signal-to-noise ratio and greater temperature stability. Therefore, we found a drastic reduction of dark current by using GaN freestanding substrates and so the GaN substrate produced a more effective detector than the sapphire substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.12
Copyright
Copyright © Materials Research Society 2005

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References

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