Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T08:02:54.866Z Has data issue: false hasContentIssue false
  • English
  • Français

Exponential Band Tails at Silicon Grain Boundaries

Published online by Cambridge University Press:  28 February 2011

J. Werner  and
M. Peisl
J. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr.l D-7000 Stuttgart 80, Federal Republic of Germany
M. Peisl
Affiliation:
Siemens AG, Zentrale Forschung × Entwicklung, Otto-Hahn-Ring 6 D-8000 München 83, Federal Republic of Germany
Get access

Abstract

The energy-distribution of interface states at grain boundaries in fine-grained silicon films is measured by two independent methods. The analysis reveals deep exponential band tails in the two-dimensional density of states within the band gap. It is proposed that these tails originate from Anderson localization of free carriers within potential fluctuations along the grain boundary plane. The measurements are in good agreement with this model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 575
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lu, N.C.C., Gerzberg, L., Lu, C.Y., and Meindl, J.D., IEEE Trans. Electron Devices ED–30, 137 (1983)Google Scholar
[2] Seager, C.H. and Pike, G.E., Appl. Phys. Lett. 35, 709 (1979)Google Scholar
[3] Werner, J., Jantsch, W., and Queisser, H.J., Solid State Comm. 42, 415 (1982)Google Scholar
[4] Hirae, X.T, Hirose, M., and Osaka, Y., J. Appl. Phys. 51, 1043 (1980)Google Scholar
[5] Graaff, H.C. de, Huybers, M., and Groot, J.G. de, Solid State Electron. 25, 67 (1982)Google Scholar
[6] Jackson, W.B., Johnson, N.M., and Biegelsen, D.K., Appl. Phys. Lett. 43, 195 (1983)CrossRefGoogle Scholar
[7] Werner, J. and Strunk, H., J. de Physique C1, 89 (1982)Google Scholar
[8] Taylor, W.E., Odell, N.H., and Fan, H.Y., Phys. Rev. 88, 867 (1952)Google Scholar
[9] Brodsky, M.H., Solid State Comm. 36, 55 (1980)Google Scholar
[10] Conti, M., Fischetti, M.V. and Gastaldi, R., Solid State Electron. 25, 5 (1982)Google Scholar
[11] Note th-at this result does not depend on the assumed grain boundary thickness 6.Google Scholar
[12] Soukoulis, C.M., Cohen, M.H., and Economou, E.N., Phys. Rev. Lett. 53, 616 (1984)Google Scholar
[13] Ando-, T., Fowler, A.B., and Stern, F., Rev. Mod. Phys. 54, 437 (1982), Eq. 2.3Google Scholar
[14] For holes calculated with m=0.55. For electrons we average over the DOS-values for the (001), (011), (111)-surfaces.Google Scholar
[15] Here we take the same W2,L for the two tail-branches. An eventual m-dependence of these two quantities could be estimated when Thomas-Fermi screening is applicable. However, the present case is more complicated since the grain boundaries are depleted from free carriers but contain localized states.Google Scholar
[16] Hirose, M., Taniguchi, M., and Osaka, Y., J. Appl. Phys. 50, 377 (1979)Google Scholar
[17] Queisser, H.J., Mat. Res. Soc. Proc. 14, 323 (1983)Google Scholar
[18] Ziman, J.M., Models of disorder, Cambridge University Press, Cambridge 1979, p. 488 Google Scholar