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Exploiting the Metal-Insulator Transition of VO2 Thin Films for Terahertz Wave Modulation and Switching

  • Md Nadim Ferdous Hoque (a1), Gulten Karaoglan-Bebek (a2), Mark Holtz (a3), Ayrton A. Bernussi (a1) and Zhaoyang Fan (a1)...

Abstract

VO2 is one of the very few natural materials that can be used to modulate terahertz (THz) radiations. A 100-nm thick VO2, when in its metallic phase, has a charge density of more than ∼ 1015 cm-2 which will strongly reflect and absorb the THz radiation; while in its insulator state, the charge density is lowered by several orders of magnitude to be THz transparent. Therefore, exploiting the metal-insulator transition of VO2 is a potential approach to modulate or even switch THz radiation for THz optics. Here we report that VO2 epitaxial thin films on sapphire substrate exhibits 85% amplitude modulation depth in a broad bandwidth, while this value can be improved to 95% when VO2 film is coated on both sides of a substrate. We further demonstrate that with wafer bonding, 4-layered VO2 thin films exhibit a transmittance as low as -20 dB to -30 dB at their metallic state, enough for switching applications. We also report our proof-of-concept demonstration of THz spatial light modulator that exhibits amplitude modulation as large as 96%, -30 dB pixel-to-pixel crosstalk, and a broad THz bandwidth.

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[1] Chen, C. and Fan, Z., Appl. Phys. Lett. 95, 262106 (2009).
[2] Nazari, M., Zhao, Y., Kuryatkov, V. V., Fan, Z. Y., Bernussi, A. A., and Holtz, M., Phys. Rev. B 87, 035142 (2013).
[3] Zhang, J. and Averitt, R., Ann. Rev. Mater. Res. 44, 19 (2014).
[4] Zhao, Y., Karaoglan-Bebek, G., Pan, X., Holtz, M., Bernussi, A.A., and Fan, Z., Appl. Phys. Lett. 104, 241901 (2014).10.1063/1.4884077
[5] Chen, C., Zhu, Y., Zhao, Y., Lee, J.H., Wang, H., Bernussi, A., Holtz, M., and Fan, Z., Appl. Phys. Lett. 97, 211905 (2010).
[6] Zhang, Y., Qiao, S., Sun, L., Shi, Q. W., Huang, W., Li, L., and Yang, Z., Opt. Express 22, 11070 (2014).
[7] Zhu, Y., Vegesna, S., Zhao, Y., Kuryatkov, V., Holtz, M., Fan, Z., Saed, M., and A Bernussi, A., Opt. Lett. 38, 2382 (2013).10.1364/OL.38.002382
[8] Jeong, Y.-G., Bernien, H., Kyoung, J.-S., Park, H.-R., Kim, H. S., Choi, J.-W., et al., Opt. Express 19, 21211 (2011).
[9] Fan, F., Hou, Y., Jiang, Z.-W., Wang, X.-H., and Chang, S.-J., Appl. Optics 51, 4589 (2012).10.1364/AO.51.004589
[10] Chan, W. L., Chen, H.-T., Taylor, A. J., Brener, I., Cich, M. J., and Mittleman, D. M., Appl. Phys. Lett. 94, 213511 (2009).10.1063/1.3147221
[11] Hoque, M. N. F., Karaoglan-Bebek, G., Holtz, M., Bernussi, A. A., and Fan, Z., Opt. Comm. 350, 309 (2015).
[12] Zhao, Y., Lee, J. H., Zhu, Y., Nazari, M., Chen, C., Wang, H., Bernussi, A., Holtz, M., and Fan, Z., J. Appl. Phys. 111, 053533 (2012).
[13] Zhu, Y., Zhao, Y., Holtz, M., Fan, Z., and Bernussi, A. A., J. Opt. Soc. Am. B 29, 2373 (2012).

Keywords

Exploiting the Metal-Insulator Transition of VO2 Thin Films for Terahertz Wave Modulation and Switching

  • Md Nadim Ferdous Hoque (a1), Gulten Karaoglan-Bebek (a2), Mark Holtz (a3), Ayrton A. Bernussi (a1) and Zhaoyang Fan (a1)...

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