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Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface

  • Joel Barnett, N. Moumen (a1), J. Gutt (a2), M. Gardner (a2), C. Huffman (a3), P. Majhi (a4), J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li (a5), B.H. Lee (a1), G. Bersuker (a5), P. M. Zeitzoff (a5), G.A. Brown, P. Lysaght, C. Young, R.W. Murto (a3) and H. R. Huff...

Abstract

We have demonstrated a uniform, robust interface for high-k deposition with significant improvements in device electrical performance compared to conventional surface preparation techniques. The interface was a thin thermal oxide that was grown and then etched back in a controlled manner to the desired thickness. Utilizing this approach, an equivalent oxide thickness (EOT) as low as 0.87 nm has been demonstrated on high-k gate stacks having improved electrical characteristics as compared to more conventionally prepared starting surfaces.

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1. Huff, H.R., Hou, A., Lim, C., Kim, Y., Barnett, J., Bersuker, G., Brown, G.A., Young, C.D., Zeitzoff, P.M., Gutt, J., Lysaght, P., Gardner, M.I. and Murto, R.W., Microelectronic Engineering, 69, No. 2–4 (September 2003), pp. 152167.
2. Iwai, H., Ohmi, S., IEDM Conf. Proc., p.625, 2002.
3. Gardner, M. I., Gopalan, S., Gutt, J., Peterson, J., Li, H-J, and Huff, H.R., International Workshop of Gate Insulators, November 2003, Tokyo, Japan, p. 170
4. Moumen, Naim, Barnett, Joel, Murto, Robert W., Gardner, Mark, Lee, Byoung Hun, Bersuker, Gennadi and Huff, Howard R., Physics and Technology of High-K Gate Dielectrics - II, Eds. S. Electrochemical Society Proceedings Series, Pennington, NJ (2003), p. 59.
5. Hauser, J.R., Ahmed, K., AIP Conf. Proc., 449, No. 1 (1998), p. 235.
6. Foran, B., Barnett, J., Lysaght, P.S., Agustin, M.P., Stemmer, S., “Characterization of advanced gate stacks for Si CMOS by electron energy loss spectroscopy in scanning transmission electron microscopy” accepted for publication to the J. of Electron Spectroscopy, March, 2004.
7. Stemmer, S., Chen, Z. Q., Levi, C. G., Lysaght, P. S., Foran, B., Gisby, J. A., and Taylor, J. R., Jap. J. Appl. Phys. Part 1 42, 3593 (2003).

Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface

  • Joel Barnett, N. Moumen (a1), J. Gutt (a2), M. Gardner (a2), C. Huffman (a3), P. Majhi (a4), J.J. Peterson, S. Gopalan, B. Foran, H.-J. Li (a5), B.H. Lee (a1), G. Bersuker (a5), P. M. Zeitzoff (a5), G.A. Brown, P. Lysaght, C. Young, R.W. Murto (a3) and H. R. Huff...

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