Molecular interface with CMOS is an area indispensable to the enhancement of our understanding of the nano-scale world. We report the integration of fullerenes in CMOS gate stack and demonstrate a functional molecular interface by effecting molecular redox operations through non-volatile charge injection in an EEPROM-type device. The gate stack of the MOS capacitor consists of a tunneling thermal oxide. A sub-monolayer of fullerenes is deposited. Then the control oxide is deposited and finally the gate metal is patterned. Charge injection occurs at a specific potential of the fullerene molecules with respect to the conduction band of Si at the Si/SiO2 interface, independent of the concentration of the fullerene sub-monolayer. This strongly indicates molecular redox in solid state that is electrostatically controllable. Such molecular interfaces can be used to enhance the spatial sensitivity of chemical sensors like the CνMOS to be able to interface with macromolecular systems.