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Excitons Bound to Stacking Faults in Wurtzite GaN

Published online by Cambridge University Press:  10 February 2011

Y. T. Rebane ,
Y. G. Shreter  and
M. Albrecht
Y. T. Rebane
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politechnicheskaya, St. Petersburg 94021, Russia
Y. G. Shreter
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politechnicheskaya, St. Petersburg 94021, Russia
M. Albrecht
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politechnicheskaya, St. Petersburg 94021, Russia
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Abstract

A model of the exciton bound to stacking faults (SF) in GaN is suggested. It is shown that SFs are potential wells (depth ∼ 120 meV) for electrons and potential barriers (∼ 60 meV) for holes. The binding energy of the exciton at stacking faults is estimated as 30 − 60 meV. The 364 nm line in GaN photoluminescence is attributed to excitons at stacking faults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 179
Copyright
Copyright © Materials Research Society 1997

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References

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