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Exciton Spectra of AlN Epitaxial Films

Published online by Cambridge University Press:  21 March 2011

T. Onuma ,
S. F. Chichibu ,
T. Sota ,
K. Asai ,
S. Sumiya ,
T. Shibata  and
M. Tanaka
T. Onuma
Affiliation:
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
S. F. Chichibu
Affiliation:
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
T. Sota
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
K. Asai
Affiliation:
NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
S. Sumiya
Affiliation:
NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
T. Shibata
Affiliation:
NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
M. Tanaka
Affiliation:
NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Abstract

Excitonic resonance energies in a C-plane AlN epilayer on the (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence (CL) measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral lineshape was fitted considering A (???u7v7c) and BC (???9v,???17v7c) exciton transitions. The energies of them at 0 K were obtained to be 6.211 and 6.266 eV, giving the crystal field splitting (Δcr) of approximately 55 meV. The AlNfilm exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature Q E was estimated to be 580 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I8.6.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Yim, W. M., Stofko, E. J., Zanzucchi, P J., Pankove, J. I., Ettenbergm, M., and Gilbert, S. L., J. Appl. Phys. 44, 292 (1973).Google Scholar
2. Perry, P. B. and Rutz, R. F., Appl. Phys. Lett. 33, 319 (1978).Google Scholar
3. Suzuki, M., Uenoyama, T., and Yanase, A., Phys. Rev. B 52, 8132 (1995).Google Scholar
4. Wei, S. and Zunger, A., Appl. Phys. Lett. 69, 2719 (1996).Google Scholar
5. Bremser, M. D., Perry, W.G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., Aspnes, D.E., and Davis, R. F., MRS Internet J. Nitride Semicond. Res. 1, 8 (1996).Google Scholar
6. Tang, X., Hossain, F., Wongchotigul, K., and Spencer, M. G., Appl. Phys. Lett. 72, 1501 (1998).Google Scholar
7. Shibata, T., Asai, K., Nakamura, Y.. Tanaka, M., Kaigawa, K., Shibata, J., and Sakai, H., J. Cryst. Growth 229, 63 (2001); T. Shibata, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, O. Oda, H. Miyake, and K. Hiramatsu (submittied to Jpn. J. Appl. Phys.)Google Scholar
8. Yamamoto, N., Mita, T., Ito, Y., Chichibu, S. F., and DenBaars, S. P., presented at the 62nd Fall Meeting of the Japan Society of Applied Physics, Nagoya, Japan, Sept. 11-14, 2001 (unpublished).Google Scholar
9. Aspnes, D. E., Surf. Sci. 37, 418 (1973).Google Scholar
10. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., J. Appl. Phys. 79, 2784 (1996).Google Scholar
11. Akasaki, I. and Hashimoto, H., Solid State Commun. 5, 851 (1967).Google Scholar
12. Davydov, V. Y., Kitaev, Y. E., Goncharuk, I. N., Smirnov, A. N., Graul, J., Semchinova, O., Uffmann, D., Smirnov, M. B., Mirgorodsky, A. P., and Evarestov, R. A., Phys. Rev. B 58, 12899 (1998).Google Scholar
13. Chichibu, S., Mizutani, T., Shioda, T., Nakanishi, H., Deguchi, T., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 70, 3440 (1997).Google Scholar
14. Cody, G. D., Tiedje, T., Abeles, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981).Google Scholar
15. Varshni, Y. P., Physica (Amsterdam) 34, 149 (1967).Google Scholar
16. Nipko, J. and Loong, C.-K., Phys. Rev. B 57, 10550 (1998).Google Scholar