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Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

  • V. Yu. Timoshenko (a1), O. A. Shalygina (a1), M. G. Lisachenko (a1), P. K. Kashkarov (a1), D. Kovalev (a2), J. Heitmann (a3), M. Zacharias (a3), B. V. Kamenev (a4) and L. Tsybeskov (a4)...

Abstract

Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

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