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Excitation and Recombination Processes in rare Earth Doped II–VI Semiconductors

Published online by Cambridge University Press:  10 February 2011

M. Godlewski
M. Godlewski*
Affiliation:
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Al. Lotników 32/46, Poland, godlew@delta2.ifpan.edu.pl
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Abstract

Rare Earth (RE) doped II–VI semiconductors are currently used for production of thin film light emitting electroluminescence devices. The excitation and recombination processes in RE activated wide band gap II–VI semiconductors (ZnS, ZnSe, SrS and CaS) are reviewed. Mechanisms relevant for obtaining bright photoluminescence (energy transfer processes, RE ionisation and exciton binding), electroluminescence (impact excitation and impact ionisation) and cathodoluminescence are described based on the recent experimental results. Efficiency of the light emission from RE doped II–VI materials is limited by several processes of nonradiative recombination. The Auger-type energy transfer processes and electric field- or thermally-activated processes responsible for 4f-4f nonradiative recombination of RE ions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 291
Copyright
Copyright © Materials Research Society 1996

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