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Excimer Laser-Assisted Etching of Silicon Using Chloropentafluoroethane

Published online by Cambridge University Press:  21 February 2011

S. D. Russell  and
D. A. Sexton
S. D. Russell
Affiliation:
Solid State Electronics Division, Naval Ocean Systems Center, San Diego, CA 92152-5000
D. A. Sexton
Affiliation:
Solid State Electronics Division, Naval Ocean Systems Center, San Diego, CA 92152-5000
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Abstract

Laser-assisted photothermal chemical reactions have been observed with silicon in a chloropentafluoroethane ambient using a KrF* laser at 248 nm. Etching occurs onlyif the incident fluence exceeds the melt threshold (∼0.75 J/cm2, with the melt duration determined by observing the change in silicon reflectance at 633 nm. Above the ablation threshold (∼2.2 J/cm2) increased surface roughness is observed. Etch rates -7 Å/pulse have been measured using both stylus profilometer and SEM cross-sectional techniques. The etch rate dependence on incident fluence, ambient pressure, doping concentration, crystal orientation and substrate temperature have been examined suggesting an adsorption limited thermal process. This process allows single step patterning of silicon devices in a non-corrosive environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 325
Copyright
Copyright © Materials Research Society 1990

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References

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