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Excimer Laser Etching of Cupric Oxide

  • G. N. A. van Veen (a1), W. Vrijmoeth (a2), T. S. Baller (a1) and J. Dieleman (a1)

Abstract

Polycrystalline CuO samples are irradiated in UHV by excimer laser pulses at 308nm. Mass spectrometry combined with time-of-flight measurements is used to determine the composition of the desorbing particles and the desorption mechanisms. Additional information is provided by Scanning-Electron-Microscopy of the etched surfaces. At fluences below 1.8 J cm−2 the products Cu, O and O2 are desorbed by a purely thermal mechanism at temperatures up to 6000 K and a copper rich surface mask is formed. At higher power densities an additional ablative contribution is monitored which increases with power density, and much less surface area is covered by a Cu-rich mask.

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1. BAuerle, D., Chemical Processing with Lasers, 1st ed. (Springer, Berlin, 1986)
2. Sesselman, W., Marinero, E.E. and Chuang, T.J., Appl. Phys. A41, 209 (1986)
3. Veen, G.N.A. van, Baller, T.S. and Dieleman, J., submitted to Appl. Phys.
4. Baller, T.S., Veen, G.N.A. van and Dieleman, J., accepted for publication in J. Vac. Sci. Technol. A6 (1988)
5. Veen, G.N.A. van, Baller, T.S. and Vries, A.E. de, J. Appl. Phys. 60, 3746 (1986)
6. Gmelins Handbuch der Anorganischen Chemie-Part Cu, Vols. 60 A/B/C (Verlag Chemie, Weinheim, 1955/1958/1963)

Excimer Laser Etching of Cupric Oxide

  • G. N. A. van Veen (a1), W. Vrijmoeth (a2), T. S. Baller (a1) and J. Dieleman (a1)

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