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Excess Vacancy Generation by Silicide Formation in Si

Published online by Cambridge University Press:  10 February 2011

R. J. Jaccodine
R. J. Jaccodine*
Affiliation:
Sherman Fairchild Center for Solid State Study, Lehigh University, Bethlehem, PA1 8015, rjj0@lehigh.edu
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Abstract

It has been long recognized that excess point defects are generated when a metal silicide is formed on silicon. Since the common dopants diffuse in Si with the aid of both self-interstials and vacancies, these point defect perturbations will influence motion of diffusions that are in the adjacent vicinity. TiSi2 is known to enhance the concentration of vacancies and several mechanisms have been proposed for this effect. Recent literature has dealt with and rejected many of these ideas; however, some of the remaining few like film strain and lattice contraction upon silicidation have been the subject of state of the art experiments which has led to their rejection.

It is the contention of this paper that by using the experimental data from this recent work and reinterpreting it, the model of volume contraction of the silicides as the cause for vacancy injection, still represents the most physically satisfying cause and therefore, was mistakenly rejected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 151
Copyright
Copyright © Materials Research Society 2000

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References

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